Fabrication and characterization of a Schottky barrier diode-type ultraviolet sensor using a ZnO single crystal

Haruyuki Endo; Mayo Sugibuchi; Kohsuke Takahashi; Shunsuke Goto; Tatsuo Hasegawa; Eriko Ohshima; Kazuyuki Meguro; Hane Kazuhiro; Yasube Kashiwaba

doi:10.1541/ieejsmas.127.131

Fabrication and characterization of a Schottky barrier diode-type ultraviolet sensor using a ZnO single crystal

Haruyuki Endo, Mayo Sugibuchi, Kohsuke Takahashi, Shunsuke Goto, Tatsuo Hasegawa, Eriko Ohshima, Kazuyuki Meguro, Hane Kazuhiro, Yasube Kashiwaba

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, a visible light blind ultraviolet sensor of a Schottky barrier photodiode using a ZnO single crystal is described. The sensor consists of a semitransparent Pt film for the Schottky electrode and Al thin film for the ohmic electrode on an n-type ZnO single crystal substrate grown by the hydrothermal method. The responsivity was 0.12 A/W at the wavelength of 365 nm and the photoresponse time was 12 μs.

Original language	English
Pages (from-to)	131-135+4
Journal	IEEJ Transactions on Sensors and Micromachines
Volume	127
Issue number	3
DOIs	https://doi.org/10.1541/ieejsmas.127.131
Publication status	Published - 2007

Keywords

Schottky barrier photodiode
Ultraviolet sensor
ZnO single crystal

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10.1541/ieejsmas.127.131

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abstract = "In this paper, a visible light blind ultraviolet sensor of a Schottky barrier photodiode using a ZnO single crystal is described. The sensor consists of a semitransparent Pt film for the Schottky electrode and Al thin film for the ohmic electrode on an n-type ZnO single crystal substrate grown by the hydrothermal method. The responsivity was 0.12 A/W at the wavelength of 365 nm and the photoresponse time was 12 μs.",

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author = "Haruyuki Endo and Mayo Sugibuchi and Kohsuke Takahashi and Shunsuke Goto and Tatsuo Hasegawa and Eriko Ohshima and Kazuyuki Meguro and Hane Kazuhiro and Yasube Kashiwaba",

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T1 - Fabrication and characterization of a Schottky barrier diode-type ultraviolet sensor using a ZnO single crystal

AU - Endo, Haruyuki

AU - Sugibuchi, Mayo

AU - Takahashi, Kohsuke

AU - Goto, Shunsuke

AU - Hasegawa, Tatsuo

AU - Ohshima, Eriko

AU - Meguro, Kazuyuki

AU - Kazuhiro, Hane

AU - Kashiwaba, Yasube

PY - 2007

Y1 - 2007

N2 - In this paper, a visible light blind ultraviolet sensor of a Schottky barrier photodiode using a ZnO single crystal is described. The sensor consists of a semitransparent Pt film for the Schottky electrode and Al thin film for the ohmic electrode on an n-type ZnO single crystal substrate grown by the hydrothermal method. The responsivity was 0.12 A/W at the wavelength of 365 nm and the photoresponse time was 12 μs.

AB - In this paper, a visible light blind ultraviolet sensor of a Schottky barrier photodiode using a ZnO single crystal is described. The sensor consists of a semitransparent Pt film for the Schottky electrode and Al thin film for the ohmic electrode on an n-type ZnO single crystal substrate grown by the hydrothermal method. The responsivity was 0.12 A/W at the wavelength of 365 nm and the photoresponse time was 12 μs.

KW - Schottky barrier photodiode

KW - Ultraviolet sensor

KW - ZnO single crystal

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ER -

Fabrication and characterization of a Schottky barrier diode-type ultraviolet sensor using a ZnO single crystal

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Keywords

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