The design, fabrication and characterization of an integrated Schottky emitter array are presented and demonstrated. The integrated emitter array consists of boron-doped diamond heaters with a diamond tip, Si micro gate array and Si focusing lens array. The diamond film is selectively deposited using electrophoresis of diamond seed particles and a hot filament chemical vapor deposition (HF-CVD) technique. The emitters, gate and lens array are electrically isolated from each other on a Pyrex glass substrate. When heating the diamond emitter at a voltage of 2.8 V, an emission current of 490 nA has been observed at an electric field of 0.36 V/μ,m. The emission current was found to be stable with a fluctuation of 2 % per hr. By fitting the measure data with Schottky emission model, the temperature at the emitter was calculated to be 1680°C.