Fabrication and characterization of an undoped GaAs single hole transistor

O. Klochan; J. C.H. Chen; A. P. Micolich; A. R. Hamilton; K. Muraki; Y. Hirayama

doi:10.1109/COMMAD.2010.5699687

Fabrication and characterization of an undoped GaAs single hole transistor

O. Klochan, J. C.H. Chen, A. P. Micolich, A. R. Hamilton, K. Muraki, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device exhibits Coulomb blockade oscillations and shows stable electrical characteristics with little drift and improved noise performance.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	113-114
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699687
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 2010 Dec 12 → 2010 Dec 15

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	10/12/12 → 10/12/15

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10.1109/COMMAD.2010.5699687

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Klochan, O., Chen, J. C. H., Micolich, A. P., Hamilton, A. R., Muraki, K., & Hirayama, Y. (2010). Fabrication and characterization of an undoped GaAs single hole transistor. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 113-114). Article 5699687 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699687

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title = "Fabrication and characterization of an undoped GaAs single hole transistor",

abstract = "We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device exhibits Coulomb blockade oscillations and shows stable electrical characteristics with little drift and improved noise performance.",

author = "O. Klochan and Chen, {J. C.H.} and Micolich, {A. P.} and Hamilton, {A. R.} and K. Muraki and Y. Hirayama",

year = "2010",

doi = "10.1109/COMMAD.2010.5699687",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "113--114",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Klochan, O, Chen, JCH, Micolich, AP, Hamilton, AR, Muraki, K & Hirayama, Y 2010, Fabrication and characterization of an undoped GaAs single hole transistor. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699687, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 113-114, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 10/12/12. https://doi.org/10.1109/COMMAD.2010.5699687

Fabrication and characterization of an undoped GaAs single hole transistor. / Klochan, O.; Chen, J. C.H.; Micolich, A. P. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 113-114 5699687 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication and characterization of an undoped GaAs single hole transistor

AU - Klochan, O.

AU - Chen, J. C.H.

AU - Micolich, A. P.

AU - Hamilton, A. R.

AU - Muraki, K.

AU - Hirayama, Y.

PY - 2010

Y1 - 2010

N2 - We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device exhibits Coulomb blockade oscillations and shows stable electrical characteristics with little drift and improved noise performance.

AB - We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device exhibits Coulomb blockade oscillations and shows stable electrical characteristics with little drift and improved noise performance.

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DO - 10.1109/COMMAD.2010.5699687

M3 - Conference contribution

AN - SCOPUS:79951759574

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 113

EP - 114

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

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Klochan O, Chen JCH, Micolich AP, Hamilton AR, Muraki K, Hirayama Y. Fabrication and characterization of an undoped GaAs single hole transistor. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 113-114. 5699687. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699687

Fabrication and characterization of an undoped GaAs single hole transistor

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