Fabrication and characterization of Co-ferrite thin films for a ferromagnetic barrier in a spin-filtering device operating at room temperature

R. Goto; Y. K. Takahashi; N. Tezuka; K. Inomata; S. Sugimoto; K. Hono

doi:10.1109/TMAG.2007.893696

Fabrication and characterization of Co-ferrite thin films for a ferromagnetic barrier in a spin-filtering device operating at room temperature

R. Goto, Y. K. Takahashi, N. Tezuka, K. Inomata, S. Sugimoto, K. Hono

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

Abstract

For development of a spin-filtering device with a ferromagnetic barrier, very thin Co-ferrite layers are prepared by the plasma oxidization of the CoFe₂ surface deposited on MgO(001) single crystal substrates and postannealing process. Spin-filtering junctions consisting of CoFe ₂/(MgO/)Co-ferrite/Ta are fabricated and exhibit nonlinear J-V curves. By the insertion of a MgO layer, clear independent rotation of two magnetic moments is observed.

Original language	English
Pages (from-to)	2797-2799
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	43
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2007.893696
Publication status	Published - 2007 Jun

Keywords

Co-ferrite
Spin-filtering devices
Spin-polarized current sources
Spintronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2007.893696

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abstract = "For development of a spin-filtering device with a ferromagnetic barrier, very thin Co-ferrite layers are prepared by the plasma oxidization of the CoFe2 surface deposited on MgO(001) single crystal substrates and postannealing process. Spin-filtering junctions consisting of CoFe 2/(MgO/)Co-ferrite/Ta are fabricated and exhibit nonlinear J-V curves. By the insertion of a MgO layer, clear independent rotation of two magnetic moments is observed.",

keywords = "Co-ferrite, Spin-filtering devices, Spin-polarized current sources, Spintronics",

author = "R. Goto and Takahashi, {Y. K.} and N. Tezuka and K. Inomata and S. Sugimoto and K. Hono",

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T1 - Fabrication and characterization of Co-ferrite thin films for a ferromagnetic barrier in a spin-filtering device operating at room temperature

AU - Goto, R.

AU - Takahashi, Y. K.

AU - Tezuka, N.

AU - Inomata, K.

AU - Sugimoto, S.

AU - Hono, K.

PY - 2007/6

Y1 - 2007/6

N2 - For development of a spin-filtering device with a ferromagnetic barrier, very thin Co-ferrite layers are prepared by the plasma oxidization of the CoFe2 surface deposited on MgO(001) single crystal substrates and postannealing process. Spin-filtering junctions consisting of CoFe 2/(MgO/)Co-ferrite/Ta are fabricated and exhibit nonlinear J-V curves. By the insertion of a MgO layer, clear independent rotation of two magnetic moments is observed.

AB - For development of a spin-filtering device with a ferromagnetic barrier, very thin Co-ferrite layers are prepared by the plasma oxidization of the CoFe2 surface deposited on MgO(001) single crystal substrates and postannealing process. Spin-filtering junctions consisting of CoFe 2/(MgO/)Co-ferrite/Ta are fabricated and exhibit nonlinear J-V curves. By the insertion of a MgO layer, clear independent rotation of two magnetic moments is observed.

KW - Co-ferrite

KW - Spin-filtering devices

KW - Spin-polarized current sources

KW - Spintronics

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SP - 2797

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 6

ER -

Fabrication and characterization of Co-ferrite thin films for a ferromagnetic barrier in a spin-filtering device operating at room temperature

Abstract

Keywords

ASJC Scopus subject areas

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