TY - JOUR
T1 - Fabrication and characterization of large figure-of-merit epitaxial PMnN-PZT/Si transducer for piezoelectric MEMS sensors
AU - Yoshida, Shinya
AU - Hanzawa, Hiroaki
AU - Wasa, Kiyotaka
AU - Tanaka, Shuji
N1 - Funding Information:
This work was supported by Grant in Aid for Scientific Research from the Japanese Ministry of Education, Culture, Sports, Science and Technology (MEXT) (No. 25286033 ). This work was also partially supported by The Murata Science Foundation.
Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.
PY - 2016/3/1
Y1 - 2016/3/1
N2 - This paper reports a highly c-axis oriented 0.06Pb(Mn1/3,Nb2/3)O3-0.94Pb(Zr0.5,Ti0.5)O3 (PMnN-PZT) epitaxial thin film sputter-deposited on a Si substrate for MEMS (MicroElectro Mechanical Systems) sensor applications. High c-axis orientation ratio more than 75% was obtained for the PMnN-PZT epitaxial thin film with thicknesses up to 4 μm by fast cooling after sputter deposition. The films exhibited a relatively large piezoelectric coefficient, e31,f ≤-14C/m2, and a quite small dielectric constant, εr33 ≤ 200. As a result, a figure of merit defined as (e31,f)2/ε0εr33 reached ∼110 GPa, which is the highest value ever reported for piezoelectric thin films on Si. Neither significant degradation nor damage of the PMnN-PZT thin film was observed during MEMS fabrication processes. The dependency of the piezoelectric and dielectric properties on temperature was small compared with conventional PZT polycrystalline thin film on Si. This epitaxial PMnN-PZT/Si transducer has a great potential for application to piezoelectric MEMS sensors.
AB - This paper reports a highly c-axis oriented 0.06Pb(Mn1/3,Nb2/3)O3-0.94Pb(Zr0.5,Ti0.5)O3 (PMnN-PZT) epitaxial thin film sputter-deposited on a Si substrate for MEMS (MicroElectro Mechanical Systems) sensor applications. High c-axis orientation ratio more than 75% was obtained for the PMnN-PZT epitaxial thin film with thicknesses up to 4 μm by fast cooling after sputter deposition. The films exhibited a relatively large piezoelectric coefficient, e31,f ≤-14C/m2, and a quite small dielectric constant, εr33 ≤ 200. As a result, a figure of merit defined as (e31,f)2/ε0εr33 reached ∼110 GPa, which is the highest value ever reported for piezoelectric thin films on Si. Neither significant degradation nor damage of the PMnN-PZT thin film was observed during MEMS fabrication processes. The dependency of the piezoelectric and dielectric properties on temperature was small compared with conventional PZT polycrystalline thin film on Si. This epitaxial PMnN-PZT/Si transducer has a great potential for application to piezoelectric MEMS sensors.
KW - Epitaxial PZT-based thin film on Si
KW - Lead zirconate titanate(PZT)
KW - MEMS(Micro-electro Mechanical Systems)
KW - Piezoelectric MEMS gyroscope
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U2 - 10.1016/j.sna.2016.01.031
DO - 10.1016/j.sna.2016.01.031
M3 - Article
AN - SCOPUS:84956652736
SN - 0924-4247
VL - 239
SP - 201
EP - 208
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
ER -