Fabrication and characterization of novel semiconductor nanomechanical structures

Hiroshi Yamaguchi, Yoshiro Hirayama

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


As an application of the "bottom-up" self-organization growth technique to the fabrication of nanoscale mechanical structures, we selectively etched a GaAs sacrificial layer under InAs wires preferentially grown on bunched steps on misoriented GaAs(110) surfaces, which led to the successful formation of single crystal InAs nanoscale cantilevers. The lengths, widths, and thicknesses of the nanolevers are typically 50-300, 20-100 and 10-20 nm, respectively. The force constant, as measured by the force-modulation imaging technique using contact-mode atomic force microscopy, ranges from 0.5 to 10 N/m, showing good agreement with that estimated from the elastic constant of InAs. The resonance frequency is expected to reach 500 MHz for the smallest one, which promises possible application to high-speed nanomechanical devices.

Original languageEnglish
Pages (from-to)1171-1176
Number of pages6
JournalSurface Science
Publication statusPublished - 2003 Jun 10
EventProceedings of the 7th International Conference on Nanometer - Malmo, Sweden
Duration: 2002 Aug 292002 Aug 31


  • Atomic force microscopy
  • Gallium arsenide
  • Indium arsenide
  • Molecular beam epitaxy
  • Semiconductor-semiconductor heterostructures


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