@inproceedings{a230e43e16f2401883e01beed6fed413,
title = "Fabrication and characterization of sub-micron scale hall devices from 2-dimensional electron gas at the heterostrutcure of GaAs/AlGaAs",
abstract = "In this work, we report the fabrication and transport properties of sub-micron Hall devices to be used for nanomagnetic studies. Hall bars were fabricated using electron-beam lithography followed by wet etching of GaAs/AlGaAs heterostructures containing two-dimensional electron gas (2-DEG). Metallization using multiple metallic layers were used to achieve ohmic contacts with the 2-DEG which is about 240 nm below the surface. Detailed characterization of the metallic layers using X-ray Photoelectron Spectroscopy (XPS) demonstrate the role of alloy formation and diffusion to form ohmic contacts with the 2-DEG. Electronic transport measurements show the metallic character of the 2-DEG. Hall effect and magnetoresistance were measured to estimate the carrier mobility of 4.2×104 cm2/V-s at 5 K in dark.",
author = "Neeti Keswani and Yoshikata Nakajima and Neha Chauhan and Sakthi Kumar and H. Ohno and Pintu Das",
note = "Funding Information: N. K is thankful to University Grant Commission (UGC) for the financial support. Publisher Copyright: {\textcopyright} 2018 Author(s).; 2nd International Conference on Condensed Matter and Applied Physics, ICC 2017 ; Conference date: 24-11-2017 Through 25-11-2017",
year = "2018",
month = may,
day = "8",
doi = "10.1063/1.5032726",
language = "English",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
editor = "Shekhawat, {Manoj Singh} and Sudhir Bhardwaj and Bhuvneshwer Suthar",
booktitle = "2nd International Conference on Condensed Matter and Applied Physics, ICC 2017",
}