Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Kunihiro Sakamoto, Kenichi Ishii, Shinichi O'uchi, Etsuro Sugimata, Hiromi Yamauchi, Eiichi Suzuki

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

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