Fabrication and evaluation of magnetic tunnel junction with MgO tunneling barrier

Takeshi Sakaguchi, Hoon Choi, Ahn Sung-Jin, Takeaki Sugimura, Mungi Park, Mikihiko Oogane, O. H. Hyuckjae, Jun Hayakawa, Shoji Ikeda, Young Min Lee, Takafumi Fukushima, Terunobu Miyazaki, Hideo Ohno, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Magnetoresistive random access memory (MRAM) has recently attracted considerable attention due to its non-volatility and high programming speed. A high Tunnel magnetoresistance (TMR) ratio is a key factor of MRAM. However, a conventional MRAM using aluminum oxide as insulator film shows a low TMR ratio of several tens of percents. MgO tunneling insulator is one of the candidates for achieving a high TMR ratio. In this study, we fabricated and evaluated Magnetic tunnel junctions (MTJs) with MgO tunneling barrier on a clad Cu word line.

Original languageEnglish
Pages (from-to)3228-3232
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2006 Apr 25


  • Cu word line
  • MgO
  • TMR ratio


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