Fabrication and evaluation of silicon micromechanical resonator using neutral beam etching technology

Nguyen Van Toan; Tomohiro Kubota; Halubai Seknar; Seiji Samukawa; Takahito Ono

doi:10.1109/NEMS.2014.6908747

Fabrication and evaluation of silicon micromechanical resonator using neutral beam etching technology

Nguyen Van Toan, Tomohiro Kubota, Halubai Seknar, Seiji Samukawa, Takahito Ono

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We present the fabrication and evaluation of silicon micromechanical resonators fabricated by neutral beam etching (NBE) to obtain narrow capacitive gap size for small motional resistance and low insertion loss. The resonant frequency of the fabricated devices with a length of 500 μm, width of 440 μm and thickness of 5 μm is 9.66 MHz, and the average quality factor (Q) value is around 78,000. The devices fabricated by both deep reactive ion etching (DRIE) and NBE are evaluated and compared. The devices fabricated by NBE show that the motional resistances are reduced by almost 11 times from 645 kΩ to 59 kΩ and their output signals (insertion loss) are increased by approximately 15 dB in comparison with those fabricated by DRIE.

Original language	English
Title of host publication	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-5
Number of pages	5
ISBN (Electronic)	9781479947270
DOIs	https://doi.org/10.1109/NEMS.2014.6908747
Publication status	Published - 2014 Sept 23
Event	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, United States Duration: 2014 Apr 13 → 2014 Apr 16

Publication series

Name	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

Other

Other	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Country/Territory	United States
City	Waikiki Beach
Period	14/4/13 → 14/4/16

Keywords

Silicon micromechanical resonator
deep reactive ion etching
low temperature co-fired ceramic
neutral beam etching technology
silicon on insulator

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/NEMS.2014.6908747

Cite this

Van Toan, N., Kubota, T., Seknar, H., Samukawa, S., & Ono, T. (2014). Fabrication and evaluation of silicon micromechanical resonator using neutral beam etching technology. In 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 (pp. 1-5). [6908747] (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS.2014.6908747

Fabrication and evaluation of silicon micromechanical resonator using neutral beam etching technology. / Van Toan, Nguyen; Kubota, Tomohiro; Seknar, Halubai et al.
9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1-5 6908747 (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Van Toan, N, Kubota, T, Seknar, H, Samukawa, S & Ono, T 2014, Fabrication and evaluation of silicon micromechanical resonator using neutral beam etching technology. in 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014., 6908747, 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014, Institute of Electrical and Electronics Engineers Inc., pp. 1-5, 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014, Waikiki Beach, United States, 14/4/13. https://doi.org/10.1109/NEMS.2014.6908747

Van Toan N, Kubota T, Seknar H, Samukawa S , Ono T. Fabrication and evaluation of silicon micromechanical resonator using neutral beam etching technology. In 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1-5. 6908747. (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014). doi: 10.1109/NEMS.2014.6908747

Van Toan, Nguyen ; Kubota, Tomohiro ; Seknar, Halubai et al. / Fabrication and evaluation of silicon micromechanical resonator using neutral beam etching technology. 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 1-5 (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014).

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abstract = "We present the fabrication and evaluation of silicon micromechanical resonators fabricated by neutral beam etching (NBE) to obtain narrow capacitive gap size for small motional resistance and low insertion loss. The resonant frequency of the fabricated devices with a length of 500 μm, width of 440 μm and thickness of 5 μm is 9.66 MHz, and the average quality factor (Q) value is around 78,000. The devices fabricated by both deep reactive ion etching (DRIE) and NBE are evaluated and compared. The devices fabricated by NBE show that the motional resistances are reduced by almost 11 times from 645 kΩ to 59 kΩ and their output signals (insertion loss) are increased by approximately 15 dB in comparison with those fabricated by DRIE.",

keywords = "Silicon micromechanical resonator, deep reactive ion etching, low temperature co-fired ceramic, neutral beam etching technology, silicon on insulator",

author = "{Van Toan}, Nguyen and Tomohiro Kubota and Halubai Seknar and Seiji Samukawa and Takahito Ono",

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T1 - Fabrication and evaluation of silicon micromechanical resonator using neutral beam etching technology

AU - Van Toan, Nguyen

AU - Kubota, Tomohiro

AU - Seknar, Halubai

AU - Samukawa, Seiji

AU - Ono, Takahito

PY - 2014/9/23

Y1 - 2014/9/23

N2 - We present the fabrication and evaluation of silicon micromechanical resonators fabricated by neutral beam etching (NBE) to obtain narrow capacitive gap size for small motional resistance and low insertion loss. The resonant frequency of the fabricated devices with a length of 500 μm, width of 440 μm and thickness of 5 μm is 9.66 MHz, and the average quality factor (Q) value is around 78,000. The devices fabricated by both deep reactive ion etching (DRIE) and NBE are evaluated and compared. The devices fabricated by NBE show that the motional resistances are reduced by almost 11 times from 645 kΩ to 59 kΩ and their output signals (insertion loss) are increased by approximately 15 dB in comparison with those fabricated by DRIE.

AB - We present the fabrication and evaluation of silicon micromechanical resonators fabricated by neutral beam etching (NBE) to obtain narrow capacitive gap size for small motional resistance and low insertion loss. The resonant frequency of the fabricated devices with a length of 500 μm, width of 440 μm and thickness of 5 μm is 9.66 MHz, and the average quality factor (Q) value is around 78,000. The devices fabricated by both deep reactive ion etching (DRIE) and NBE are evaluated and compared. The devices fabricated by NBE show that the motional resistances are reduced by almost 11 times from 645 kΩ to 59 kΩ and their output signals (insertion loss) are increased by approximately 15 dB in comparison with those fabricated by DRIE.

KW - Silicon micromechanical resonator

KW - deep reactive ion etching

KW - low temperature co-fired ceramic

KW - neutral beam etching technology

KW - silicon on insulator

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Fabrication and evaluation of silicon micromechanical resonator using neutral beam etching technology

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