Fabrication of (001)-oriented MgO thin filins on si substrates

Takashi Onodera; Masahiro Yoshida; Nobuki Tezuka; Satoshi Sugimoto; Yoshiaki Saito

doi:10.2320/jinstmet.77.89

Fabrication of (001)-oriented MgO thin filins on si substrates

Takashi Onodera, Masahiro Yoshida, Nobuki Tezuka, Satoshi Sugimoto, Yoshiaki Saito

Tohoku University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We investigated the structural property of MgO thin films on Si(00l) substrates by molecular beam epitaxy in order to obtain (00l)-oriented MgO barrier for high spin polarization on Si substrate. The MgO layer deposited at 200°C and deposition rate of 0.30 nm/min grew with (001)-orientation on Si(00l) substrate. The (001)-orientation and crystallization of the MgO layer were enhanced by insertion of Mg layer into interface between Si substrate and MgO layer. It is considered that the Mg layer prevented oxidation of Si at interface and functioned as buffer layer.

Original language	English
Pages (from-to)	89-93
Number of pages	5
Journal	Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume	77
Issue number	3
DOIs	https://doi.org/10.2320/jinstmet.77.89
Publication status	Published - 2013 Mar

Keywords

(001) -oriented mgo
Silicon
Spintronics

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10.2320/jinstmet.77.89

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abstract = "We investigated the structural property of MgO thin films on Si(00l) substrates by molecular beam epitaxy in order to obtain (00l)-oriented MgO barrier for high spin polarization on Si substrate. The MgO layer deposited at 200°C and deposition rate of 0.30 nm/min grew with (001)-orientation on Si(00l) substrate. The (001)-orientation and crystallization of the MgO layer were enhanced by insertion of Mg layer into interface between Si substrate and MgO layer. It is considered that the Mg layer prevented oxidation of Si at interface and functioned as buffer layer.",

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author = "Takashi Onodera and Masahiro Yoshida and Nobuki Tezuka and Satoshi Sugimoto and Yoshiaki Saito",

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T1 - Fabrication of (001)-oriented MgO thin filins on si substrates

AU - Onodera, Takashi

AU - Yoshida, Masahiro

AU - Tezuka, Nobuki

AU - Sugimoto, Satoshi

AU - Saito, Yoshiaki

PY - 2013/3

Y1 - 2013/3

N2 - We investigated the structural property of MgO thin films on Si(00l) substrates by molecular beam epitaxy in order to obtain (00l)-oriented MgO barrier for high spin polarization on Si substrate. The MgO layer deposited at 200°C and deposition rate of 0.30 nm/min grew with (001)-orientation on Si(00l) substrate. The (001)-orientation and crystallization of the MgO layer were enhanced by insertion of Mg layer into interface between Si substrate and MgO layer. It is considered that the Mg layer prevented oxidation of Si at interface and functioned as buffer layer.

AB - We investigated the structural property of MgO thin films on Si(00l) substrates by molecular beam epitaxy in order to obtain (00l)-oriented MgO barrier for high spin polarization on Si substrate. The MgO layer deposited at 200°C and deposition rate of 0.30 nm/min grew with (001)-orientation on Si(00l) substrate. The (001)-orientation and crystallization of the MgO layer were enhanced by insertion of Mg layer into interface between Si substrate and MgO layer. It is considered that the Mg layer prevented oxidation of Si at interface and functioned as buffer layer.

KW - (001) -oriented mgo

KW - Silicon

KW - Spintronics

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ER -

Fabrication of (001)-oriented MgO thin filins on si substrates

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