Fabrication of (001)-oriented MgO thin filins on si substrates

Takashi Onodera, Masahiro Yoshida, Nobuki Tezuka, Satoshi Sugimoto, Yoshiaki Saito

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We investigated the structural property of MgO thin films on Si(00l) substrates by molecular beam epitaxy in order to obtain (00l)-oriented MgO barrier for high spin polarization on Si substrate. The MgO layer deposited at 200°C and deposition rate of 0.30 nm/min grew with (001)-orientation on Si(00l) substrate. The (001)-orientation and crystallization of the MgO layer were enhanced by insertion of Mg layer into interface between Si substrate and MgO layer. It is considered that the Mg layer prevented oxidation of Si at interface and functioned as buffer layer.

Original languageEnglish
Pages (from-to)89-93
Number of pages5
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Issue number3
Publication statusPublished - 2013 Mar


  • (001) -oriented mgo
  • Silicon
  • Spintronics


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