@inproceedings{4146b4549fba496394d0245234189264,
title = "Fabrication of 0.1 μm mosfet with super self-aligned ultrashallow junction electrodes using selective si1-xgex CVD",
abstract = "Fabrication process of 0.1μm MOSFET's were developed with Super Self-aligned ultra-Shallow junction Electrode(S3EMOSFET) by utilizing in-situ impurity doped Si1-xGex selective epitaxy on the source/drain regions at 550°C by CVD. Normal saturation characteristics were observed and the threshold voltage scarcely showed a shift with the gate length, which means that the short channel effect is greatly suppressed in the S3EMOSFET. Further improvements of the current drivability were performed by annealing and selective tungsten growth. The results show very high potentials of this device for an ultrasmall MOSFET, because the effective channel length is almost the same as the fabricated gate length and the source/drain junctions are extremely shallow.",
author = "J. Murota and M. Ishii and K. Goto and M. Sakuraba and T. Matsuura and Y. Kudoh and M. Koyanagi",
year = "1997",
doi = "10.1109/ESSDERC.1997.194444",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "376--379",
editor = "H. Grunbacher",
booktitle = "European Solid-State Device Research Conference",
address = "United States",
note = "27th European Solid-State Device Research Conference, ESSDERC 1997 ; Conference date: 22-09-1997 Through 24-09-1997",
}