Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties

Y. Hirayama; S. Tarucha; Y. Suzuki; H. Okamoto

doi:10.1103/PhysRevB.37.2774

Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties

Y. Hirayama, S. Tarucha, Y. Suzuki, H. Okamoto

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A quantum-well wire was fabricated with use of local intermixing of a GaAs-AlxGa1-xAs single-quantum-well epitaxial layer induced by Ga focused-ion-beam implantation. Fine structures were observed in low temperature photoluminescence and photoluminescence excitation spectra. These fine structures are explained by the density of states specific to the two-dimensionally confined carrier system.

Original language	English
Pages (from-to)	2774-2777
Number of pages	4
Journal	Physical Review B
Volume	37
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevB.37.2774
Publication status	Published - 1988 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.37.2774

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title = "Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties",

abstract = "A quantum-well wire was fabricated with use of local intermixing of a GaAs-AlxGa1-xAs single-quantum-well epitaxial layer induced by Ga focused-ion-beam implantation. Fine structures were observed in low temperature photoluminescence and photoluminescence excitation spectra. These fine structures are explained by the density of states specific to the two-dimensionally confined carrier system.",

author = "Y. Hirayama and S. Tarucha and Y. Suzuki and H. Okamoto",

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AU - Tarucha, S.

AU - Suzuki, Y.

AU - Okamoto, H.

PY - 1988/1/1

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AB - A quantum-well wire was fabricated with use of local intermixing of a GaAs-AlxGa1-xAs single-quantum-well epitaxial layer induced by Ga focused-ion-beam implantation. Fine structures were observed in low temperature photoluminescence and photoluminescence excitation spectra. These fine structures are explained by the density of states specific to the two-dimensionally confined carrier system.

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Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties

Abstract

ASJC Scopus subject areas

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