A quantum-well wire was fabricated with use of local intermixing of a GaAs-AlxGa1-xAs single-quantum-well epitaxial layer induced by Ga focused-ion-beam implantation. Fine structures were observed in low temperature photoluminescence and photoluminescence excitation spectra. These fine structures are explained by the density of states specific to the two-dimensionally confined carrier system.
|Number of pages||4|
|Journal||Physical Review B|
|Publication status||Published - 1988 Jan 1|
ASJC Scopus subject areas
- Condensed Matter Physics