CuAlO2 polycrystalline films were deposited by the helicon-wave-excited plasma sputtering (HWPS) method at 700 °C. The best full-width at half-maximum value of the (006) CuAlO2 X-ray diffraction peak was 0.19 degrees, which was similar to those reported previously using other deposition methods. While, noncrystalline Cu-Al-O films were deposited by a conventional RF sputtering method. Using this p-type transparent conducting oxide (TCO) film and an n-type ZnO film deposited by HWPS, a n-type ZnO/p-type Cu-Al-O heterojunction diode was fabricated. Optical trans-mittance of the device was approximately 80% in the near infrared region. The rectifying current-voltage characteristics with a threshold forward voltage approximately 1.4 V were obtained. These results are the first step toward realizing an electrical/optical device using p-type GuAlO2 or Cu-Al-O films.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2009|
|Event||16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany|
Duration: 2008 Sept 15 → 2008 Sept 19