Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching

Kazuhiko Endo; Shuichi Noda; Meishoku Masahara; Tomohiro Kubota; Takuya Ozaki; Seiji Samukawa; Yongxun Liu; Kenichi Ishii; Yuki Ishikawa; Etsuro Sugimata; Takashi Matsukawa; Hidenori Takashima; Hiromi Yamauchi; Eiichi Suzuki

doi:10.1143/JJAP.45.L279

Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching

Kazuhiko Endo, Shuichi Noda, Meishoku Masahara, Tomohiro Kubota, Takuya Ozaki, Seiji Samukawa, Yongxun Liu, Kenichi Ishii, Yuki Ishikawa, Etsuro Sugimata, Takashi Matsukawa, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A vertical ultrathin-channel (UTC) formation process using a low-energy neutral beam etching (NBE) for a double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed for the first time. The NBE can perfectly eliminate the charge build-up and photon radiation damages from the plasma. By utilizing the NBE, fin-type vertical MOSFETs with damage-less smooth sidewalls were successfully fabricated. The fabricated FinFETs realized higher electron mobility than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically-flat surface utilizing by the NBE.

Original language	English
Pages (from-to)	L279-L281
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	8-11
DOIs	https://doi.org/10.1143/JJAP.45.L279
Publication status	Published - 2006 Mar 10

Keywords

Damage-less
Double-gate MOSFET
Etching
Mobility
Neutral beam

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10.1143/JJAP.45.L279

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Endo, K., Noda, S., Masahara, M., Kubota, T., Ozaki, T., Samukawa, S., Liu, Y., Ishii, K., Ishikawa, Y., Sugimata, E., Matsukawa, T., Takashima, H., Yamauchi, H., & Suzuki, E. (2006). Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching. Japanese Journal of Applied Physics, 45(8-11), L279-L281. https://doi.org/10.1143/JJAP.45.L279

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title = "Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching",

abstract = "A vertical ultrathin-channel (UTC) formation process using a low-energy neutral beam etching (NBE) for a double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed for the first time. The NBE can perfectly eliminate the charge build-up and photon radiation damages from the plasma. By utilizing the NBE, fin-type vertical MOSFETs with damage-less smooth sidewalls were successfully fabricated. The fabricated FinFETs realized higher electron mobility than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically-flat surface utilizing by the NBE.",

keywords = "Damage-less, Double-gate MOSFET, Etching, Mobility, Neutral beam",

author = "Kazuhiko Endo and Shuichi Noda and Meishoku Masahara and Tomohiro Kubota and Takuya Ozaki and Seiji Samukawa and Yongxun Liu and Kenichi Ishii and Yuki Ishikawa and Etsuro Sugimata and Takashi Matsukawa and Hidenori Takashima and Hiromi Yamauchi and Eiichi Suzuki",

year = "2006",

month = mar,

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doi = "10.1143/JJAP.45.L279",

language = "English",

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Endo, K, Noda, S, Masahara, M, Kubota, T, Ozaki, T, Samukawa, S, Liu, Y, Ishii, K, Ishikawa, Y, Sugimata, E, Matsukawa, T, Takashima, H, Yamauchi, H & Suzuki, E 2006, 'Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching', Japanese Journal of Applied Physics, vol. 45, no. 8-11, pp. L279-L281. https://doi.org/10.1143/JJAP.45.L279

TY - JOUR

T1 - Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching

AU - Endo, Kazuhiko

AU - Noda, Shuichi

AU - Masahara, Meishoku

AU - Kubota, Tomohiro

AU - Ozaki, Takuya

AU - Samukawa, Seiji

AU - Liu, Yongxun

AU - Ishii, Kenichi

AU - Ishikawa, Yuki

AU - Sugimata, Etsuro

AU - Matsukawa, Takashi

AU - Takashima, Hidenori

AU - Yamauchi, Hiromi

AU - Suzuki, Eiichi

PY - 2006/3/10

Y1 - 2006/3/10

N2 - A vertical ultrathin-channel (UTC) formation process using a low-energy neutral beam etching (NBE) for a double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed for the first time. The NBE can perfectly eliminate the charge build-up and photon radiation damages from the plasma. By utilizing the NBE, fin-type vertical MOSFETs with damage-less smooth sidewalls were successfully fabricated. The fabricated FinFETs realized higher electron mobility than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically-flat surface utilizing by the NBE.

AB - A vertical ultrathin-channel (UTC) formation process using a low-energy neutral beam etching (NBE) for a double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed for the first time. The NBE can perfectly eliminate the charge build-up and photon radiation damages from the plasma. By utilizing the NBE, fin-type vertical MOSFETs with damage-less smooth sidewalls were successfully fabricated. The fabricated FinFETs realized higher electron mobility than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically-flat surface utilizing by the NBE.

KW - Damage-less

KW - Double-gate MOSFET

KW - Etching

KW - Mobility

KW - Neutral beam

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8-11

ER -

Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching

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