Fabrication of an organic field-effect transistor on a mica gate dielectric

Akira Matsumoto, Ryo Onoki, Keiji Ueno, Susumu Ikeda, Koichiro Saiki

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


We fabricated pentacene-based organic field-effect transistors (OFETs) using single-crystalline natural mica substrates as the gate dielectric. Substrate temperatures during the deposition of pentacene films were varied from room temperature (RT) to 90 °C. Epitaxial growth of the pentacene film on the mica surface was observed even at RT. The FET working characteristics on the mica gate dielectric have been observed for the first time.

Original languageEnglish
Pages (from-to)354-355
Number of pages2
JournalChemistry Letters
Issue number4
Publication statusPublished - 2006 Apr 5


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