Fabrication of (Bi,Pr)(Fe,Mn)O 3 thin films on polycrystalline diamond substrates by chemical solution deposition and their properties

Takeshi Kawae; Hiroki Kawasaki; Takashi Nakajima; Norio Tokuda; Soichiro Okamura; Akiharu Morimoto; Yoshihiko Takano

doi:10.1143/JJAP.51.09LA08

Fabrication of (Bi,Pr)(Fe,Mn)O ₃ thin films on polycrystalline diamond substrates by chemical solution deposition and their properties

Takeshi Kawae, Hiroki Kawasaki, Takashi Nakajima, Norio Tokuda, Soichiro Okamura, Akiharu Morimoto, Yoshihiko Takano

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

(Bi,Pr)(Fe,Mn)O ₃ (BPFM) thin films were deposited on the conductive B-doped diamond coated polycrystalline diamond substrates by chemical solution deposition method. BPFM thin films were crystallized with random orientation on the polycrystalline diamond. The BPFM/B-doped diamond layered film showed polarization vs electric field (P-E) hysteresis loops without any influences of leakage current at room temperature. The remnant polarization 2Pr and the coercive field 2E _c at the maximum electric field of 1000 kV/cm were 135 μC/cm ² and 700 kV/cm, respectively. In the range of room temperature to 130 °C, the prepared film capacitor showed saturated-loop shape in the P-E curve without influences of leakage current.

Original language	English
Article number	09LA08
Journal	Japanese journal of applied physics
Volume	51
Issue number	9 PART 2
DOIs	https://doi.org/10.1143/JJAP.51.09LA08
Publication status	Published - 2012 Sept
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Fabrication of (Bi,Pr)(Fe,Mn)O 3 thin films on polycrystalline diamond substrates by chemical solution deposition and their properties",

abstract = "(Bi,Pr)(Fe,Mn)O 3 (BPFM) thin films were deposited on the conductive B-doped diamond coated polycrystalline diamond substrates by chemical solution deposition method. BPFM thin films were crystallized with random orientation on the polycrystalline diamond. The BPFM/B-doped diamond layered film showed polarization vs electric field (P-E) hysteresis loops without any influences of leakage current at room temperature. The remnant polarization 2Pr and the coercive field 2E c at the maximum electric field of 1000 kV/cm were 135 μC/cm 2 and 700 kV/cm, respectively. In the range of room temperature to 130 °C, the prepared film capacitor showed saturated-loop shape in the P-E curve without influences of leakage current.",

author = "Takeshi Kawae and Hiroki Kawasaki and Takashi Nakajima and Norio Tokuda and Soichiro Okamura and Akiharu Morimoto and Yoshihiko Takano",

year = "2012",

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language = "English",

volume = "51",

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publisher = "Japan Society of Applied Physics",

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T1 - Fabrication of (Bi,Pr)(Fe,Mn)O 3 thin films on polycrystalline diamond substrates by chemical solution deposition and their properties

AU - Kawae, Takeshi

AU - Kawasaki, Hiroki

AU - Nakajima, Takashi

AU - Tokuda, Norio

AU - Okamura, Soichiro

AU - Morimoto, Akiharu

AU - Takano, Yoshihiko

PY - 2012/9

Y1 - 2012/9

N2 - (Bi,Pr)(Fe,Mn)O 3 (BPFM) thin films were deposited on the conductive B-doped diamond coated polycrystalline diamond substrates by chemical solution deposition method. BPFM thin films were crystallized with random orientation on the polycrystalline diamond. The BPFM/B-doped diamond layered film showed polarization vs electric field (P-E) hysteresis loops without any influences of leakage current at room temperature. The remnant polarization 2Pr and the coercive field 2E c at the maximum electric field of 1000 kV/cm were 135 μC/cm 2 and 700 kV/cm, respectively. In the range of room temperature to 130 °C, the prepared film capacitor showed saturated-loop shape in the P-E curve without influences of leakage current.

AB - (Bi,Pr)(Fe,Mn)O 3 (BPFM) thin films were deposited on the conductive B-doped diamond coated polycrystalline diamond substrates by chemical solution deposition method. BPFM thin films were crystallized with random orientation on the polycrystalline diamond. The BPFM/B-doped diamond layered film showed polarization vs electric field (P-E) hysteresis loops without any influences of leakage current at room temperature. The remnant polarization 2Pr and the coercive field 2E c at the maximum electric field of 1000 kV/cm were 135 μC/cm 2 and 700 kV/cm, respectively. In the range of room temperature to 130 °C, the prepared film capacitor showed saturated-loop shape in the P-E curve without influences of leakage current.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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IS - 9 PART 2

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Fabrication of (Bi,Pr)(Fe,Mn)O ₃ thin films on polycrystalline diamond substrates by chemical solution deposition and their properties

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