Fabrication of conductive single-crystal semiconductor nanoscale electromechanical structures

Hiroshi Yamaguchi, Yoshiro Hirayama

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


As an application of the self-organization growth technique to the fabrication of nanoscale mechanical structures, we selectively etched a GaAs sacrificial layer under InAs wires preferentially grown on bunched steps on misoriented GaAs (110) surfaces, which led to the formation of single-crystal InAs nanoscale cantilevers. Their lengths, widths and thickness are typically 50-300, 20-100 and 10-30 nm, respectively. The structures are expected to be electrically conductive and to be promising for use in fabricating single-crystal nanoelectromechanical systems.

Original languageEnglish
Pages (from-to)4428-4430
Number of pages3
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2002 Jun 10


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