Fabrication of cosputtered Zn-In-Sn-O films and their applications to organic light-emitting diodes

Gi Seok Heo; Yuji Matsumoto; In Gi Gim; Jong Woon Park; Kwang Young Kim; Tae Won Kim

doi:10.1016/j.ssc.2009.07.050

Fabrication of cosputtered Zn-In-Sn-O films and their applications to organic light-emitting diodes

Gi Seok Heo, Yuji Matsumoto, In Gi Gim, Jong Woon Park, Kwang Young Kim, Tae Won Kim

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Zn-In-Sn-O (ZITO) films have been grown by rf magnetron cosputtering system from ceramic oxide targets of ZnO and ITO onto glass substrate. X-ray diffraction analysis shows that the microstructure is amorphous below the substrate temperature of 250 ^{{ring operator}}C. The films exhibit sheet resistance as low as 16.7 Ω/□ and optical transparency comparable to grater than that of Sn-doped indium oxide (ITO) films. The work function ranged 5.05-5.19 eV, which is a higher work function compared to ITO (4.7 eV). The fabricated ZITO films are used in fabrication of organic light-emitting diodes (OLEDs). The ZITO anode with the zinc content of 12.5 at.% [Zn/(Zn+In+Sn)] fabricated at 250 ^{{ring operator}}C-based OLED shows lower turn-on voltage and higher current density compared to that of ITO-based control device.

Original language	English
Pages (from-to)	1731-1734
Number of pages	4
Journal	Solid State Communications
Volume	149
Issue number	41-42
DOIs	https://doi.org/10.1016/j.ssc.2009.07.050
Publication status	Published - 2009 Nov
Externally published	Yes

Keywords

A. TCO
A. Zn-In-Sn-O
B. RF magnetron cosputtering
C. Amorphous semiconductor

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2009.07.050

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title = "Fabrication of cosputtered Zn-In-Sn-O films and their applications to organic light-emitting diodes",

abstract = "Zn-In-Sn-O (ZITO) films have been grown by rf magnetron cosputtering system from ceramic oxide targets of ZnO and ITO onto glass substrate. X-ray diffraction analysis shows that the microstructure is amorphous below the substrate temperature of 250 {ring operator}C. The films exhibit sheet resistance as low as 16.7 Ω/□ and optical transparency comparable to grater than that of Sn-doped indium oxide (ITO) films. The work function ranged 5.05-5.19 eV, which is a higher work function compared to ITO (4.7 eV). The fabricated ZITO films are used in fabrication of organic light-emitting diodes (OLEDs). The ZITO anode with the zinc content of 12.5 at.% [Zn/(Zn+In+Sn)] fabricated at 250 {ring operator}C-based OLED shows lower turn-on voltage and higher current density compared to that of ITO-based control device.",

keywords = "A. TCO, A. Zn-In-Sn-O, B. RF magnetron cosputtering, C. Amorphous semiconductor",

author = "Heo, {Gi Seok} and Yuji Matsumoto and Gim, {In Gi} and Park, {Jong Woon} and Kim, {Kwang Young} and Kim, {Tae Won}",

year = "2009",

month = nov,

doi = "10.1016/j.ssc.2009.07.050",

language = "English",

volume = "149",

pages = "1731--1734",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "41-42",

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TY - JOUR

T1 - Fabrication of cosputtered Zn-In-Sn-O films and their applications to organic light-emitting diodes

AU - Heo, Gi Seok

AU - Matsumoto, Yuji

AU - Gim, In Gi

AU - Park, Jong Woon

AU - Kim, Kwang Young

AU - Kim, Tae Won

PY - 2009/11

Y1 - 2009/11

N2 - Zn-In-Sn-O (ZITO) films have been grown by rf magnetron cosputtering system from ceramic oxide targets of ZnO and ITO onto glass substrate. X-ray diffraction analysis shows that the microstructure is amorphous below the substrate temperature of 250 {ring operator}C. The films exhibit sheet resistance as low as 16.7 Ω/□ and optical transparency comparable to grater than that of Sn-doped indium oxide (ITO) films. The work function ranged 5.05-5.19 eV, which is a higher work function compared to ITO (4.7 eV). The fabricated ZITO films are used in fabrication of organic light-emitting diodes (OLEDs). The ZITO anode with the zinc content of 12.5 at.% [Zn/(Zn+In+Sn)] fabricated at 250 {ring operator}C-based OLED shows lower turn-on voltage and higher current density compared to that of ITO-based control device.

AB - Zn-In-Sn-O (ZITO) films have been grown by rf magnetron cosputtering system from ceramic oxide targets of ZnO and ITO onto glass substrate. X-ray diffraction analysis shows that the microstructure is amorphous below the substrate temperature of 250 {ring operator}C. The films exhibit sheet resistance as low as 16.7 Ω/□ and optical transparency comparable to grater than that of Sn-doped indium oxide (ITO) films. The work function ranged 5.05-5.19 eV, which is a higher work function compared to ITO (4.7 eV). The fabricated ZITO films are used in fabrication of organic light-emitting diodes (OLEDs). The ZITO anode with the zinc content of 12.5 at.% [Zn/(Zn+In+Sn)] fabricated at 250 {ring operator}C-based OLED shows lower turn-on voltage and higher current density compared to that of ITO-based control device.

KW - A. TCO

KW - A. Zn-In-Sn-O

KW - B. RF magnetron cosputtering

KW - C. Amorphous semiconductor

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JO - Solid State Communications

JF - Solid State Communications

IS - 41-42

ER -

Fabrication of cosputtered Zn-In-Sn-O films and their applications to organic light-emitting diodes

Abstract

Keywords

ASJC Scopus subject areas

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