Fabrication of Co2MnAl heusler alloy epitaxial film using Cr buffer layer

Yuya Sakuraba; Jun Nakata; Mikihiko Oogane; Hitoshi Kubota; Yasuo Ando; Akimasa Sakuma; Terunobu Miyazaki

doi:10.1143/JJAP.44.6535

Fabrication of Co₂MnAl heusler alloy epitaxial film using Cr buffer layer

Yuya Sakuraba, Jun Nakata, Mikihiko Oogane, Hitoshi Kubota, Yasuo Ando, Akimasa Sakuma, Terunobu Miyazaki

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

Thin films of the full-Heusler compound, Co₂MnAl, were grown on Cr-buffered MgO(001) substrates at different growth temperature and post-annealing temperature by magnetron sputtering. Atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements show that Cr-buffer layer can largely improve the surface morphology and structural quality of Co ₂MnAl film. The (001)-oriented epitaxial growth and B2 structure were confirmed by XRD measurements for all prepared samples. The smallest surface roughness (∼ 2 Å) and an identical M_s value to the bulk value were obtained in the sample which was deposited at ambient temperature and post-annealed at 300°C.

Original language	English
Pages (from-to)	6535-6537
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	9 A
DOIs	https://doi.org/10.1143/JJAP.44.6535
Publication status	Published - 2005 Sept 8

Keywords

Epitaxial film
Half-metal
Heusler alloy
Magnetic tunnel junction

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10.1143/JJAP.44.6535

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@article{45031095e3c44ca5a8e945abbe6b838d,

title = "Fabrication of Co2MnAl heusler alloy epitaxial film using Cr buffer layer",

abstract = "Thin films of the full-Heusler compound, Co2MnAl, were grown on Cr-buffered MgO(001) substrates at different growth temperature and post-annealing temperature by magnetron sputtering. Atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements show that Cr-buffer layer can largely improve the surface morphology and structural quality of Co 2MnAl film. The (001)-oriented epitaxial growth and B2 structure were confirmed by XRD measurements for all prepared samples. The smallest surface roughness (∼ 2 {\AA}) and an identical Ms value to the bulk value were obtained in the sample which was deposited at ambient temperature and post-annealed at 300°C.",

keywords = "Epitaxial film, Half-metal, Heusler alloy, Magnetic tunnel junction",

author = "Yuya Sakuraba and Jun Nakata and Mikihiko Oogane and Hitoshi Kubota and Yasuo Ando and Akimasa Sakuma and Terunobu Miyazaki",

year = "2005",

month = sep,

day = "8",

doi = "10.1143/JJAP.44.6535",

language = "English",

volume = "44",

pages = "6535--6537",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9 A",

}

TY - JOUR

T1 - Fabrication of Co2MnAl heusler alloy epitaxial film using Cr buffer layer

AU - Sakuraba, Yuya

AU - Nakata, Jun

AU - Oogane, Mikihiko

AU - Kubota, Hitoshi

AU - Ando, Yasuo

AU - Sakuma, Akimasa

AU - Miyazaki, Terunobu

PY - 2005/9/8

Y1 - 2005/9/8

N2 - Thin films of the full-Heusler compound, Co2MnAl, were grown on Cr-buffered MgO(001) substrates at different growth temperature and post-annealing temperature by magnetron sputtering. Atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements show that Cr-buffer layer can largely improve the surface morphology and structural quality of Co 2MnAl film. The (001)-oriented epitaxial growth and B2 structure were confirmed by XRD measurements for all prepared samples. The smallest surface roughness (∼ 2 Å) and an identical Ms value to the bulk value were obtained in the sample which was deposited at ambient temperature and post-annealed at 300°C.

AB - Thin films of the full-Heusler compound, Co2MnAl, were grown on Cr-buffered MgO(001) substrates at different growth temperature and post-annealing temperature by magnetron sputtering. Atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements show that Cr-buffer layer can largely improve the surface morphology and structural quality of Co 2MnAl film. The (001)-oriented epitaxial growth and B2 structure were confirmed by XRD measurements for all prepared samples. The smallest surface roughness (∼ 2 Å) and an identical Ms value to the bulk value were obtained in the sample which was deposited at ambient temperature and post-annealed at 300°C.

KW - Epitaxial film

KW - Half-metal

KW - Heusler alloy

KW - Magnetic tunnel junction

UR - http://www.scopus.com/inward/record.url?scp=30744463890&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30744463890&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.6535

DO - 10.1143/JJAP.44.6535

M3 - Article

AN - SCOPUS:30744463890

SN - 0021-4922

VL - 44

SP - 6535

EP - 6537

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 A

ER -

Fabrication of Co₂MnAl heusler alloy epitaxial film using Cr buffer layer

Abstract

Keywords

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