Fabrication of Co2MnAl heusler alloy epitaxial film using Cr buffer layer

Yuya Sakuraba, Jun Nakata, Mikihiko Oogane, Hitoshi Kubota, Yasuo Ando, Akimasa Sakuma, Terunobu Miyazaki

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)


Thin films of the full-Heusler compound, Co2MnAl, were grown on Cr-buffered MgO(001) substrates at different growth temperature and post-annealing temperature by magnetron sputtering. Atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements show that Cr-buffer layer can largely improve the surface morphology and structural quality of Co 2MnAl film. The (001)-oriented epitaxial growth and B2 structure were confirmed by XRD measurements for all prepared samples. The smallest surface roughness (∼ 2 Å) and an identical Ms value to the bulk value were obtained in the sample which was deposited at ambient temperature and post-annealed at 300°C.

Original languageEnglish
Pages (from-to)6535-6537
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number9 A
Publication statusPublished - 2005 Sept 8


  • Epitaxial film
  • Half-metal
  • Heusler alloy
  • Magnetic tunnel junction


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