Fabrication of doped Cu-TCNQ nanocrystals and their optoelectronic properties

Tsunenobu Onodera; Satomi Matsuo; Kentaro Hiraishi; Akito Masuhara; Hitoshi Kasai; Hidetoshi Oikawa

doi:10.1039/c2ce25926e

Fabrication of doped Cu-TCNQ nanocrystals and their optoelectronic properties

Tsunenobu Onodera, Satomi Matsuo, Kentaro Hiraishi, Akito Masuhara, Hitoshi Kasai, Hidetoshi Oikawa

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have successfully fabricated doped Cu-TCNQ nanocrystals, using the reprecipitation method involving a chemical reduction process, which took the composition ratio of Cu:TCNQ = 1.3:1 and contained both TCNQ anion and dianion. Interestingly, the doped nanocrystals exhibited a new strong absorption in NIR region, clearly dependent on the content of the TCNQ dianion.

Original language	English
Pages (from-to)	7586-7589
Number of pages	4
Journal	CrystEngComm
Volume	14
Issue number	22
DOIs	https://doi.org/10.1039/c2ce25926e
Publication status	Published - 2012 Nov 21

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abstract = "We have successfully fabricated doped Cu-TCNQ nanocrystals, using the reprecipitation method involving a chemical reduction process, which took the composition ratio of Cu:TCNQ = 1.3:1 and contained both TCNQ anion and dianion. Interestingly, the doped nanocrystals exhibited a new strong absorption in NIR region, clearly dependent on the content of the TCNQ dianion.",

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AU - Onodera, Tsunenobu

AU - Matsuo, Satomi

AU - Hiraishi, Kentaro

AU - Masuhara, Akito

AU - Kasai, Hitoshi

AU - Oikawa, Hidetoshi

PY - 2012/11/21

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N2 - We have successfully fabricated doped Cu-TCNQ nanocrystals, using the reprecipitation method involving a chemical reduction process, which took the composition ratio of Cu:TCNQ = 1.3:1 and contained both TCNQ anion and dianion. Interestingly, the doped nanocrystals exhibited a new strong absorption in NIR region, clearly dependent on the content of the TCNQ dianion.

AB - We have successfully fabricated doped Cu-TCNQ nanocrystals, using the reprecipitation method involving a chemical reduction process, which took the composition ratio of Cu:TCNQ = 1.3:1 and contained both TCNQ anion and dianion. Interestingly, the doped nanocrystals exhibited a new strong absorption in NIR region, clearly dependent on the content of the TCNQ dianion.

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Fabrication of doped Cu-TCNQ nanocrystals and their optoelectronic properties

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