Fabrication of ferromagnetic single-electron tunneling devices by utilizing metallic nanowire as hard mask stencil

T. Niizeki; H. Kubota; Y. Ando; T. Miyazaki

doi:10.1063/1.1850408

Fabrication of ferromagnetic single-electron tunneling devices by utilizing metallic nanowire as hard mask stencil

T. Niizeki, H. Kubota, Y. Ando, T. Miyazaki

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The stacked magnetic tunnel junctions (MTJs) are microfabricated into ferromagnetic single-electron tunneling devices (F-SETs) by using electron-beam lithography. The F-SETs have a couple of small MTJs (30×500 nm2 -0.1×100 μ m2), which are connected via a metallic nanowire. The large tunnel magnetoresistance ratio as much as 40% (at RT) and small junction area dependence of the RA (resistance×area) are obtained. The electrostatic energy of F-SETs estimated from the minimum junction area corresponds to the temperature of 1 K, which is high enough to observe Coulomb blockade phenomena in a dilution refrigerator.

Original language	English
Article number	10C909
Journal	Journal of Applied Physics
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.1850408
Publication status	Published - 2005 May 15

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title = "Fabrication of ferromagnetic single-electron tunneling devices by utilizing metallic nanowire as hard mask stencil",

abstract = "The stacked magnetic tunnel junctions (MTJs) are microfabricated into ferromagnetic single-electron tunneling devices (F-SETs) by using electron-beam lithography. The F-SETs have a couple of small MTJs (30×500 nm2 -0.1×100 μ m2), which are connected via a metallic nanowire. The large tunnel magnetoresistance ratio as much as 40% (at RT) and small junction area dependence of the RA (resistance×area) are obtained. The electrostatic energy of F-SETs estimated from the minimum junction area corresponds to the temperature of 1 K, which is high enough to observe Coulomb blockade phenomena in a dilution refrigerator.",

author = "T. Niizeki and H. Kubota and Y. Ando and T. Miyazaki",

note = "Funding Information: This study was supported by the IT-program of Research Revolution 2002 (RR2002) “Development of Universal Low-Power Spin Memory,” Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, CREST of JST (Japan Science and Technology). A part of this work was performed at the clean-room facility of Center for Interdisciplinary Research of Tohoku University.",

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AU - Niizeki, T.

AU - Kubota, H.

AU - Ando, Y.

AU - Miyazaki, T.

N1 - Funding Information: This study was supported by the IT-program of Research Revolution 2002 (RR2002) “Development of Universal Low-Power Spin Memory,” Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, CREST of JST (Japan Science and Technology). A part of this work was performed at the clean-room facility of Center for Interdisciplinary Research of Tohoku University.

PY - 2005/5/15

Y1 - 2005/5/15

N2 - The stacked magnetic tunnel junctions (MTJs) are microfabricated into ferromagnetic single-electron tunneling devices (F-SETs) by using electron-beam lithography. The F-SETs have a couple of small MTJs (30×500 nm2 -0.1×100 μ m2), which are connected via a metallic nanowire. The large tunnel magnetoresistance ratio as much as 40% (at RT) and small junction area dependence of the RA (resistance×area) are obtained. The electrostatic energy of F-SETs estimated from the minimum junction area corresponds to the temperature of 1 K, which is high enough to observe Coulomb blockade phenomena in a dilution refrigerator.

AB - The stacked magnetic tunnel junctions (MTJs) are microfabricated into ferromagnetic single-electron tunneling devices (F-SETs) by using electron-beam lithography. The F-SETs have a couple of small MTJs (30×500 nm2 -0.1×100 μ m2), which are connected via a metallic nanowire. The large tunnel magnetoresistance ratio as much as 40% (at RT) and small junction area dependence of the RA (resistance×area) are obtained. The electrostatic energy of F-SETs estimated from the minimum junction area corresponds to the temperature of 1 K, which is high enough to observe Coulomb blockade phenomena in a dilution refrigerator.

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Fabrication of ferromagnetic single-electron tunneling devices by utilizing metallic nanowire as hard mask stencil

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