Fabrication of FinFETs by damage-free neutral-beam etching technology

Kazuhiko Endo, Shuichi Noda, Meishoku Masahara, Tomohiro Kubota, Takuya Ozaki, Seiji Samukawa, Yongxun Liu, Kenichi Ishii, Yuki Ishikawa, Etsuro Sugimata, Takashi Matsukawa, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


A high aspect ratio and damage-free vertical ultrathin channel for a vertical-type double-gate MOSFET was fabricated by using low-energy neutral-beam etching (NBE). NBE can completely eliminate the charge build-up and photon-radiation damages caused by the plasma. The fabricated FinFETs realize a higher device performance (i.e., higher electron mobility) than that obtained by using a conventional reactive-ion etching. The improved mobility is well explained by the NB-etched atomically flat surface. These results strongly support the effectiveness of the NB technology for nanoscale CMOS fabrication.

Original languageEnglish
Pages (from-to)1826-1833
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number8
Publication statusPublished - 2006 Aug


  • Carrier mobility
  • Damaged-free
  • Double-gate MOSFET (DG-MOSFET)
  • Neutral beam (NB)
  • Utrathin-channel fabrication


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