Fabrication of fluxon device

H. Akoh; S. Takada; Koji Nakajima; H. Mizusawa; Y. Sawada

Fabrication of fluxon device

H. Akoh, S. Takada, Koji Nakajima, H. Mizusawa, Y. Sawada

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a fabrication process of fluxon devices using Nb/AlO_x/Nb Josephson junction technologies with a Nb underlayer. Using the present technologies, fluxon devices have an excellent reproducibility of Josephson critical current density within ±21%, resistance values within ±9%, and inductance values within ±9%. In addition, fluxon-antifluxon collision behaviors were demonstrated using a Josephson sampling system as a typical example of fluxon devices.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume	57
Issue number	11
Publication status	Published - 1993 Dec 1

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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N2 - This paper presents a fabrication process of fluxon devices using Nb/AlOx/Nb Josephson junction technologies with a Nb underlayer. Using the present technologies, fluxon devices have an excellent reproducibility of Josephson critical current density within ±21%, resistance values within ±9%, and inductance values within ±9%. In addition, fluxon-antifluxon collision behaviors were demonstrated using a Josephson sampling system as a typical example of fluxon devices.

AB - This paper presents a fabrication process of fluxon devices using Nb/AlOx/Nb Josephson junction technologies with a Nb underlayer. Using the present technologies, fluxon devices have an excellent reproducibility of Josephson critical current density within ±21%, resistance values within ±9%, and inductance values within ±9%. In addition, fluxon-antifluxon collision behaviors were demonstrated using a Josephson sampling system as a typical example of fluxon devices.

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Fabrication of fluxon device

Abstract

ASJC Scopus subject areas

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