Fabrication of fluxon device

H. Akoh, S. Takada, Koji Nakajima, H. Mizusawa, Y. Sawada

Research output: Contribution to journalArticlepeer-review


This paper presents a fabrication process of fluxon devices using Nb/AlOx/Nb Josephson junction technologies with a Nb underlayer. Using the present technologies, fluxon devices have an excellent reproducibility of Josephson critical current density within ±21%, resistance values within ±9%, and inductance values within ±9%. In addition, fluxon-antifluxon collision behaviors were demonstrated using a Josephson sampling system as a typical example of fluxon devices.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Issue number11
Publication statusPublished - 1993 Dec 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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