TY - GEN
T1 - Fabrication of freestanding membrane GaN light-emitting diode on Si substrate for MEMS applications
AU - Tanae, T.
AU - Kawaguchi, H.
AU - Iwabuchi, A.
AU - Hane, K.
PY - 2012
Y1 - 2012
N2 - Freestanding membrane GaN light emitting diode (LED) was fabricated on Si substrate for MEMS applications. GaN LED layer grown on Si substrate was used for the fabrication. Removing Si substrate by deep reactive ion etching (DRIE), the freestanding membrane structure of GaN LED was generated. In spite of the DRIE, no degradation was observed in the fabricated membrane LED. Using the membrane structure with grating, wavelength selective emission was obtained.
AB - Freestanding membrane GaN light emitting diode (LED) was fabricated on Si substrate for MEMS applications. GaN LED layer grown on Si substrate was used for the fabrication. Removing Si substrate by deep reactive ion etching (DRIE), the freestanding membrane structure of GaN LED was generated. In spite of the DRIE, no degradation was observed in the fabricated membrane LED. Using the membrane structure with grating, wavelength selective emission was obtained.
KW - freeestanding membrane
KW - GaN-LED
KW - Si DRIE
UR - http://www.scopus.com/inward/record.url?scp=84869196855&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869196855&partnerID=8YFLogxK
U2 - 10.1109/OMEMS.2012.6318787
DO - 10.1109/OMEMS.2012.6318787
M3 - Conference contribution
AN - SCOPUS:84869196855
SN - 9781457715112
T3 - International Conference on Optical MEMS and Nanophotonics
SP - 31
EP - 32
BT - 2012 International Conference on Optical MEMS and Nanophotonics, OMN 2012
T2 - 2012 International Conference on Optical MEMS and Nanophotonics, OMN 2012
Y2 - 6 August 2012 through 9 August 2012
ER -