A high quality freestanding Pb(Zr,Ti)O 3 (PZT) film with various micropatterns was fabricated using a Ge sacrificial layer in order to meet the need of micro-electromechanical system (MEMS) applications. A flat Pt film was released from a Si substrate by etching the Ge layer (~1 μm) between the Pt film and the Si substrate. After that, PZT was deposited on the freestanding Pt film by low temperature rf-magnetron sputtering and then annealed. The obtained freestanding PZT film showed strong (100) orientation and good ferroelectric property. This might be due to the characteristics of the developed process, for example, the lattice parameter change of the Pt film, a small heat capacity in the annealing process of PZT, and an absence of clamping effect from the substrate.