TY - JOUR
T1 - Fabrication of graphene directly on SiO 2 without transfer processes by annealing sputtered amorphous carbon
AU - Sato, Motonobu
AU - Inukai, Manabu
AU - Ikenaga, Eiji
AU - Muro, Takayuki
AU - Ogawa, Shuichi
AU - Takakuwa, Yuji
AU - Nakano, Haruhisa
AU - Kawabata, Akio
AU - Nihei, Mizuhisa
AU - Yokoyama, Naoki
PY - 2012/4
Y1 - 2012/4
N2 - We fabricated multilayer graphene directly on SiO 2 by annealing sputtered amorphous carbon with a catalyst-a simple non-chemical vapor deposition method-without the use of complicated transfer processes. Structural analysis revealed that the graphene sheets formed an epitaxial structure aligned to the Co(111) surface between the Co catalyst and SiO 2 dielectric. In the multilayer graphene, a resistivity of approximately 500 μ Ωcm was obtained, which is one order of magnitude higher than that of highly oriented pyrolytic graphite.
AB - We fabricated multilayer graphene directly on SiO 2 by annealing sputtered amorphous carbon with a catalyst-a simple non-chemical vapor deposition method-without the use of complicated transfer processes. Structural analysis revealed that the graphene sheets formed an epitaxial structure aligned to the Co(111) surface between the Co catalyst and SiO 2 dielectric. In the multilayer graphene, a resistivity of approximately 500 μ Ωcm was obtained, which is one order of magnitude higher than that of highly oriented pyrolytic graphite.
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U2 - 10.1143/JJAP.51.04DB01
DO - 10.1143/JJAP.51.04DB01
M3 - Article
AN - SCOPUS:84860362640
SN - 0021-4922
VL - 51
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4 PART 2
M1 - 04DB01
ER -