TY - GEN
T1 - Fabrication of high aspect aluminum doped zinc oxide nanomechanical structures by deep RIE and ALD
AU - Nguyen, Van Toan
AU - Ono, Takahito
PY - 2017/2/23
Y1 - 2017/2/23
N2 - This work reports the patterning of high aspect aluminum doped zinc oxide (AZO) for nanowall hollows and capacitive resonators by deep reactive ion etching (deep RIE) and atomic layer deposition (ALD). Nanowall hollows with 50 nm in thickness and 15 μm in height as well as smooth surfaces have been achieved and the aspect ratio of their height-to-width is as high as 300. Suspended AZO capacitive resonators have been successfully fabricated. Its resonant frequency is observed at 10.4 kHz and the quality factor (Q) is approximately 500.
AB - This work reports the patterning of high aspect aluminum doped zinc oxide (AZO) for nanowall hollows and capacitive resonators by deep reactive ion etching (deep RIE) and atomic layer deposition (ALD). Nanowall hollows with 50 nm in thickness and 15 μm in height as well as smooth surfaces have been achieved and the aspect ratio of their height-to-width is as high as 300. Suspended AZO capacitive resonators have been successfully fabricated. Its resonant frequency is observed at 10.4 kHz and the quality factor (Q) is approximately 500.
UR - http://www.scopus.com/inward/record.url?scp=85015772711&partnerID=8YFLogxK
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U2 - 10.1109/MEMSYS.2017.7863492
DO - 10.1109/MEMSYS.2017.7863492
M3 - Conference contribution
AN - SCOPUS:85015772711
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 652
EP - 655
BT - 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017
Y2 - 22 January 2017 through 26 January 2017
ER -