Fabrication of high aspect aluminum doped zinc oxide nanomechanical structures by deep RIE and ALD

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This work reports the patterning of high aspect aluminum doped zinc oxide (AZO) for nanowall hollows and capacitive resonators by deep reactive ion etching (deep RIE) and atomic layer deposition (ALD). Nanowall hollows with 50 nm in thickness and 15 μm in height as well as smooth surfaces have been achieved and the aspect ratio of their height-to-width is as high as 300. Suspended AZO capacitive resonators have been successfully fabricated. Its resonant frequency is observed at 10.4 kHz and the quality factor (Q) is approximately 500.

Original languageEnglish
Title of host publication2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages652-655
Number of pages4
ISBN (Electronic)9781509050789
DOIs
Publication statusPublished - 2017 Feb 23
Event30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017 - Las Vegas, United States
Duration: 2017 Jan 222017 Jan 26

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)1084-6999

Other

Other30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017
Country/TerritoryUnited States
CityLas Vegas
Period17/1/2217/1/26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Fabrication of high aspect aluminum doped zinc oxide nanomechanical structures by deep RIE and ALD'. Together they form a unique fingerprint.

Cite this