TY - JOUR
T1 - Fabrication of in-plane magnetized FePt sputtered films with large uniaxial anisotropy
AU - Seki, T.
AU - Shima, T.
AU - Takanashi, K.
N1 - Funding Information:
This work was partly supported by “Nanohetero Metallic Materials” project from the MEXT. The structural characterization was performed at Laboratory for Advanced Materials, IMR, Tohoku University.
PY - 2004/5
Y1 - 2004/5
N2 - In-plane magnetized FePt films were prepared on MgO (1 1 0) single crystalline substrates by sputter-deposition, and the effects of a buffer layer and substrate temperature during deposition (Ts) on the formation of the L10 ordered structure have been investigated. From the X-ray diffraction patterns, the FePt (1 1 0) and (3 3 0) superlattice peaks of L1 0 phase have been clearly observed for the FePt thin film with an Au buffer layer deposited at Ts = 300°C. High degree of chemical order (S = 0.7±0.1) have been achieved, leading to the large uniaxial magnetic anisotropy Ku of 2.4 × 107 erg/cm 3 with the easy axis along an in-plane direction.
AB - In-plane magnetized FePt films were prepared on MgO (1 1 0) single crystalline substrates by sputter-deposition, and the effects of a buffer layer and substrate temperature during deposition (Ts) on the formation of the L10 ordered structure have been investigated. From the X-ray diffraction patterns, the FePt (1 1 0) and (3 3 0) superlattice peaks of L1 0 phase have been clearly observed for the FePt thin film with an Au buffer layer deposited at Ts = 300°C. High degree of chemical order (S = 0.7±0.1) have been achieved, leading to the large uniaxial magnetic anisotropy Ku of 2.4 × 107 erg/cm 3 with the easy axis along an in-plane direction.
KW - Deposition temperature
KW - FePt
KW - In-plane magnetic anisotropy
KW - L1 structure
KW - Thin film
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U2 - 10.1016/j.jmmm.2003.12.912
DO - 10.1016/j.jmmm.2003.12.912
M3 - Article
AN - SCOPUS:23044502903
SN - 0304-8853
VL - 272-276
SP - 2182
EP - 2183
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
IS - III
ER -