Fabrication of induced two-dimensional hole systems on (311)A GaAs

W. R. Clarke, A. P. Micolich, A. R. Hamilton, M. Y. Simmons, K. Muraki, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


We demonstrate a method for fabricating induced two-dimensional hole devices in (311)A GaAs. The method uses a metallic p+ -GaAs capping layer as an in situ top gate that pins the Fermi energy close to the valence band, thereby allowing very small gate biases to be used to induce a two-dimensional hole system at a AlGaAsGaAs interface. We present transport data from devices with different levels of background impurities. Modeling the mobility as a function of hole density gives a quantitative measure of the level of disorder and indicates that these systems can be used for a systematic study of the effects of disorder in strongly interacting low-dimensional systems.

Original languageEnglish
Article number023707
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 2006 Jan 15


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