Fabrication of induced two-dimensional hole systems on (311)A GaAs

W. R. Clarke; A. P. Micolich; A. R. Hamilton; M. Y. Simmons; K. Muraki; Y. Hirayama

doi:10.1063/1.2163998

Fabrication of induced two-dimensional hole systems on (311)A GaAs

W. R. Clarke, A. P. Micolich, A. R. Hamilton, M. Y. Simmons, K. Muraki, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We demonstrate a method for fabricating induced two-dimensional hole devices in (311)A GaAs. The method uses a metallic p+ -GaAs capping layer as an in situ top gate that pins the Fermi energy close to the valence band, thereby allowing very small gate biases to be used to induce a two-dimensional hole system at a AlGaAsGaAs interface. We present transport data from devices with different levels of background impurities. Modeling the mobility as a function of hole density gives a quantitative measure of the level of disorder and indicates that these systems can be used for a systematic study of the effects of disorder in strongly interacting low-dimensional systems.

Original language	English
Article number	023707
Journal	Journal of Applied Physics
Volume	99
Issue number	2
DOIs	https://doi.org/10.1063/1.2163998
Publication status	Published - 2006 Jan 15

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abstract = "We demonstrate a method for fabricating induced two-dimensional hole devices in (311)A GaAs. The method uses a metallic p+ -GaAs capping layer as an in situ top gate that pins the Fermi energy close to the valence band, thereby allowing very small gate biases to be used to induce a two-dimensional hole system at a AlGaAsGaAs interface. We present transport data from devices with different levels of background impurities. Modeling the mobility as a function of hole density gives a quantitative measure of the level of disorder and indicates that these systems can be used for a systematic study of the effects of disorder in strongly interacting low-dimensional systems.",

author = "Clarke, {W. R.} and Micolich, {A. P.} and Hamilton, {A. R.} and Simmons, {M. Y.} and K. Muraki and Y. Hirayama",

note = "Funding Information: The authors acknowledge financial support from the Australian Research Council (ARC). One of the authors (A.P.M.) acknowledges financial support from an ARC Postdoctoral Fellowship.",

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AU - Clarke, W. R.

AU - Micolich, A. P.

AU - Hamilton, A. R.

AU - Simmons, M. Y.

AU - Muraki, K.

AU - Hirayama, Y.

N1 - Funding Information: The authors acknowledge financial support from the Australian Research Council (ARC). One of the authors (A.P.M.) acknowledges financial support from an ARC Postdoctoral Fellowship.

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N2 - We demonstrate a method for fabricating induced two-dimensional hole devices in (311)A GaAs. The method uses a metallic p+ -GaAs capping layer as an in situ top gate that pins the Fermi energy close to the valence band, thereby allowing very small gate biases to be used to induce a two-dimensional hole system at a AlGaAsGaAs interface. We present transport data from devices with different levels of background impurities. Modeling the mobility as a function of hole density gives a quantitative measure of the level of disorder and indicates that these systems can be used for a systematic study of the effects of disorder in strongly interacting low-dimensional systems.

AB - We demonstrate a method for fabricating induced two-dimensional hole devices in (311)A GaAs. The method uses a metallic p+ -GaAs capping layer as an in situ top gate that pins the Fermi energy close to the valence band, thereby allowing very small gate biases to be used to induce a two-dimensional hole system at a AlGaAsGaAs interface. We present transport data from devices with different levels of background impurities. Modeling the mobility as a function of hole density gives a quantitative measure of the level of disorder and indicates that these systems can be used for a systematic study of the effects of disorder in strongly interacting low-dimensional systems.

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Fabrication of induced two-dimensional hole systems on (311)A GaAs

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