Fabrication of L-shaped Fe4N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field

Toshiki Gushi; Keita Ito; Syuta Honda; Yoko Yasutomi; Kaoru Toko; Hirotaka Oosato; Yoshimasa Sugimoto; Kiyoshi Asakawa; Norio Ota; Takashi Suemasu

doi:10.7567/JJAP.54.028003

Fabrication of L-shaped Fe₄N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field

Toshiki Gushi, Keita Ito, Syuta Honda, Yoko Yasutomi, Kaoru Toko, Hirotaka Oosato, Yoshimasa Sugimoto, Kiyoshi Asakawa, Norio Ota, Takashi Suemasu

Materials Development Division

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We grow a 15-nm-thick ferromagnetic Fe₄N epitaxial film on a SrTiO₃(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-μm-wide and 24-μm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl₂ reactive ion etching. Their longitudinal directions are set in parallel to the magnetic easy axes, Fe₄N[100] and [010]. With applying external magnetic field in the direction parallel to Fe₄N[100] or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. This experiment is the preliminary step toward current-driven domain wall motion in Fe₄N having a negative spin polarization.

Original language	English
Article number	028003
Journal	Japanese journal of applied physics
Volume	54
Issue number	2
DOIs	https://doi.org/10.7567/JJAP.54.028003
Publication status	Published - 2015 Feb 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Fabrication of L-shaped Fe4N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field",

abstract = "We grow a 15-nm-thick ferromagnetic Fe4N epitaxial film on a SrTiO3(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-μm-wide and 24-μm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl2 reactive ion etching. Their longitudinal directions are set in parallel to the magnetic easy axes, Fe4N[100] and [010]. With applying external magnetic field in the direction parallel to Fe4N[100] or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. This experiment is the preliminary step toward current-driven domain wall motion in Fe4N having a negative spin polarization.",

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T1 - Fabrication of L-shaped Fe4N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field

AU - Gushi, Toshiki

AU - Ito, Keita

AU - Honda, Syuta

AU - Yasutomi, Yoko

AU - Toko, Kaoru

AU - Oosato, Hirotaka

AU - Sugimoto, Yoshimasa

AU - Asakawa, Kiyoshi

AU - Ota, Norio

AU - Suemasu, Takashi

PY - 2015/2/1

Y1 - 2015/2/1

N2 - We grow a 15-nm-thick ferromagnetic Fe4N epitaxial film on a SrTiO3(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-μm-wide and 24-μm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl2 reactive ion etching. Their longitudinal directions are set in parallel to the magnetic easy axes, Fe4N[100] and [010]. With applying external magnetic field in the direction parallel to Fe4N[100] or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. This experiment is the preliminary step toward current-driven domain wall motion in Fe4N having a negative spin polarization.

AB - We grow a 15-nm-thick ferromagnetic Fe4N epitaxial film on a SrTiO3(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-μm-wide and 24-μm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl2 reactive ion etching. Their longitudinal directions are set in parallel to the magnetic easy axes, Fe4N[100] and [010]. With applying external magnetic field in the direction parallel to Fe4N[100] or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. This experiment is the preliminary step toward current-driven domain wall motion in Fe4N having a negative spin polarization.

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Fabrication of L-shaped Fe₄N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field

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