Fabrication of L1 0-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions

Masaki Hosoda; Mikihiko Oogane; Miho Kubota; Takahide Kubota; Haruaki Saruyama; Satoshi Iihama; Hiroshi Naganuma; Yasuo Ando

doi:10.1063/1.3676428

Fabrication of L1 ₀-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions

Masaki Hosoda, Mikihiko Oogane, Miho Kubota, Takahide Kubota, Haruaki Saruyama, Satoshi Iihama, Hiroshi Naganuma, Yasuo Ando

Tohoku University

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

Structural and magnetic properties of MnAl thin films with different composition, growth temperature, and post-annealing temperature were investigated. The optimum condition for fabrication of L1 ₀-MnAl perpendicularly magnetized thin film deposited on Cr-buffered MgO single crystal substrate was revealed. The results of x ray diffraction indicated that the MnAl films annealed at proper temperature had a (001)-orientation and L1 ₀-ordered structure. The L1 ₀-ordered films were perpendicularly magnetized and had a large perpendicular anisotropy. In addition, low surface roughness was achieved. For the optimized fabrication condition, the saturation magnetization M _s of 600 emu/cm ³ and perpendicular magnetic anisotropy K _u of 1.0 × 10 ⁷erg/cm ³ was obtained using the Mn ₄₈Al ₅₂ target at deposition temperature of 200°C and post-annealing temperature of 450°C.

Original language	English
Article number	07A324
Journal	Journal of Applied Physics
Volume	111
Issue number	7
DOIs	https://doi.org/10.1063/1.3676428
Publication status	Published - 2012 Apr 1

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title = "Fabrication of L1 0-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions",

abstract = "Structural and magnetic properties of MnAl thin films with different composition, growth temperature, and post-annealing temperature were investigated. The optimum condition for fabrication of L1 0-MnAl perpendicularly magnetized thin film deposited on Cr-buffered MgO single crystal substrate was revealed. The results of x ray diffraction indicated that the MnAl films annealed at proper temperature had a (001)-orientation and L1 0-ordered structure. The L1 0-ordered films were perpendicularly magnetized and had a large perpendicular anisotropy. In addition, low surface roughness was achieved. For the optimized fabrication condition, the saturation magnetization M s of 600 emu/cm 3 and perpendicular magnetic anisotropy K u of 1.0 × 10 7erg/cm 3 was obtained using the Mn 48Al 52 target at deposition temperature of 200°C and post-annealing temperature of 450°C.",

author = "Masaki Hosoda and Mikihiko Oogane and Miho Kubota and Takahide Kubota and Haruaki Saruyama and Satoshi Iihama and Hiroshi Naganuma and Yasuo Ando",

note = "Funding Information: This research is supported by the Japan Society for the Promotion of Science (JSPS) through its Funding Program for World- Leading Innovative R&D on Science and Technology (FIRST Program).",

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doi = "10.1063/1.3676428",

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T1 - Fabrication of L1 0-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions

AU - Hosoda, Masaki

AU - Oogane, Mikihiko

AU - Kubota, Miho

AU - Kubota, Takahide

AU - Saruyama, Haruaki

AU - Iihama, Satoshi

AU - Naganuma, Hiroshi

AU - Ando, Yasuo

N1 - Funding Information: This research is supported by the Japan Society for the Promotion of Science (JSPS) through its Funding Program for World- Leading Innovative R&D on Science and Technology (FIRST Program).

PY - 2012/4/1

Y1 - 2012/4/1

N2 - Structural and magnetic properties of MnAl thin films with different composition, growth temperature, and post-annealing temperature were investigated. The optimum condition for fabrication of L1 0-MnAl perpendicularly magnetized thin film deposited on Cr-buffered MgO single crystal substrate was revealed. The results of x ray diffraction indicated that the MnAl films annealed at proper temperature had a (001)-orientation and L1 0-ordered structure. The L1 0-ordered films were perpendicularly magnetized and had a large perpendicular anisotropy. In addition, low surface roughness was achieved. For the optimized fabrication condition, the saturation magnetization M s of 600 emu/cm 3 and perpendicular magnetic anisotropy K u of 1.0 × 10 7erg/cm 3 was obtained using the Mn 48Al 52 target at deposition temperature of 200°C and post-annealing temperature of 450°C.

AB - Structural and magnetic properties of MnAl thin films with different composition, growth temperature, and post-annealing temperature were investigated. The optimum condition for fabrication of L1 0-MnAl perpendicularly magnetized thin film deposited on Cr-buffered MgO single crystal substrate was revealed. The results of x ray diffraction indicated that the MnAl films annealed at proper temperature had a (001)-orientation and L1 0-ordered structure. The L1 0-ordered films were perpendicularly magnetized and had a large perpendicular anisotropy. In addition, low surface roughness was achieved. For the optimized fabrication condition, the saturation magnetization M s of 600 emu/cm 3 and perpendicular magnetic anisotropy K u of 1.0 × 10 7erg/cm 3 was obtained using the Mn 48Al 52 target at deposition temperature of 200°C and post-annealing temperature of 450°C.

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Fabrication of L1 ₀-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions

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