Abstract
Nb-doped anatase TiO2 (TNO) polycrystalline films with excellent conductivity and transparency were successfully fabricated by reactive sputtering combined with post annealing in H2 gas. The H2 annealing of as-deposited amorphous films caused an abrupt decrease in resistivity (ρ), which was accompanied by crystallization into the anatase structure. A film deposited on an unheated glass substrate with subsequent H2 annealing at 600 C exhibited a resistivity of 9.5 × 10 -4 Ω cm and an average optical transmittance of ∼75% in the visible region. This ρ value is of the same order as that of epitaxial TNO films, which indicates that sputtering is a promising technique for obtaining large-area TNO films.
Original language | English |
---|---|
Pages (from-to) | 5275-5277 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 46 |
Issue number | 8 A |
DOIs | |
Publication status | Published - 2007 Aug 6 |
Externally published | Yes |
Keywords
- Anatase
- Nb-doped TiO
- Polycrystalline film
- Post deposition annealing
- Sputtering
- TNO
- Transparent conductive oxide
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)