Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

Kosuke Fujiwara; Mikihiko Oogane; Saeko Yokota; Takuo Nishikawa; Hiroshi Naganuma; Yasuo Ando

doi:10.1063/1.3677266

Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

Kosuke Fujiwara, Mikihiko Oogane, Saeko Yokota, Takuo Nishikawa, Hiroshi Naganuma, Yasuo Ando

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

Magnetic tunnel junctions with a Ni ₈₀Fe ₂₀/Ru/Co ₄₀Fe ₄₀B ₂₀ synthetic antiferro-coupled bottom free layer and an MgO barrier layer have been fabricated. Double annealing process was carried out in order to obtain linearity against magnetic field with hysteresis-free resistance response. The effect of the annealing temperature and NiFe thickness in the free layer on the magnetic field sensor performance was investigated. We have observed a very high sensitivity of 25.3/Oe while keeping linearity.

Original language	English
Article number	07C710
Journal	Journal of Applied Physics
Volume	111
Issue number	7
DOIs	https://doi.org/10.1063/1.3677266
Publication status	Published - 2012 Apr 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices",

abstract = "Magnetic tunnel junctions with a Ni 80Fe 20/Ru/Co 40Fe 40B 20 synthetic antiferro-coupled bottom free layer and an MgO barrier layer have been fabricated. Double annealing process was carried out in order to obtain linearity against magnetic field with hysteresis-free resistance response. The effect of the annealing temperature and NiFe thickness in the free layer on the magnetic field sensor performance was investigated. We have observed a very high sensitivity of 25.3/Oe while keeping linearity.",

author = "Kosuke Fujiwara and Mikihiko Oogane and Saeko Yokota and Takuo Nishikawa and Hiroshi Naganuma and Yasuo Ando",

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T1 - Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

AU - Fujiwara, Kosuke

AU - Oogane, Mikihiko

AU - Yokota, Saeko

AU - Nishikawa, Takuo

AU - Naganuma, Hiroshi

AU - Ando, Yasuo

N1 - Funding Information: This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO).

PY - 2012/4/1

Y1 - 2012/4/1

N2 - Magnetic tunnel junctions with a Ni 80Fe 20/Ru/Co 40Fe 40B 20 synthetic antiferro-coupled bottom free layer and an MgO barrier layer have been fabricated. Double annealing process was carried out in order to obtain linearity against magnetic field with hysteresis-free resistance response. The effect of the annealing temperature and NiFe thickness in the free layer on the magnetic field sensor performance was investigated. We have observed a very high sensitivity of 25.3/Oe while keeping linearity.

AB - Magnetic tunnel junctions with a Ni 80Fe 20/Ru/Co 40Fe 40B 20 synthetic antiferro-coupled bottom free layer and an MgO barrier layer have been fabricated. Double annealing process was carried out in order to obtain linearity against magnetic field with hysteresis-free resistance response. The effect of the annealing temperature and NiFe thickness in the free layer on the magnetic field sensor performance was investigated. We have observed a very high sensitivity of 25.3/Oe while keeping linearity.

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Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

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