TY - JOUR
T1 - Fabrication of magnetic tunnel junctions with a metastable bcc Co3Mn disordered alloy as a bottom electrode
AU - Kunimatsu, Kazuma
AU - Tsuchiya, Tomoki
AU - Elphick, Kelvin
AU - Ichinose, Tomohiro
AU - Suzuki, Kazuya
AU - Hirohata, Atsufumi
AU - Mizukami, Shigemi
N1 - Funding Information:
We would like to thank Y. Kondo for his assistance. This work was partially supported by JST CREST (No. JPMJCR17J5).
Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019
Y1 - 2019
N2 - We fabricated MgO barrier magnetic tunnel junctions (MTJs) with a Co3Mn alloy bottom and FeCoB top electrodes. The (001)-oriented epitaxial films of the metastable bcc Co3Mn disordered alloys obtained showed saturation magnetization of approximately 1640 emu cm-3. The transmission electron microscopy showed that the MgO barrier was epitaxially grown on the Co3Mn electrode. Tunnel magnetoresistance of approximately 150% was observed at room temperature after the annealing of MTJs at 350 °C, indicating that bcc Co3Mn alloys have relatively high spin polarization.
AB - We fabricated MgO barrier magnetic tunnel junctions (MTJs) with a Co3Mn alloy bottom and FeCoB top electrodes. The (001)-oriented epitaxial films of the metastable bcc Co3Mn disordered alloys obtained showed saturation magnetization of approximately 1640 emu cm-3. The transmission electron microscopy showed that the MgO barrier was epitaxially grown on the Co3Mn electrode. Tunnel magnetoresistance of approximately 150% was observed at room temperature after the annealing of MTJs at 350 °C, indicating that bcc Co3Mn alloys have relatively high spin polarization.
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U2 - 10.7567/1347-4065/ab2f96
DO - 10.7567/1347-4065/ab2f96
M3 - Article
AN - SCOPUS:85072522323
SN - 0021-4922
VL - 58
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 8
M1 - 080908
ER -