Fabrication of micromachined quartz-crystal resonators using surface activated bonding of silicon and quartz wafer

Akihiro Takahashi; Takahito Ono; Yu Ching Lin; Masayoshi Esashi

doi:10.1109/ICSENS.2007.355869

Fabrication of micromachined quartz-crystal resonators using surface activated bonding of silicon and quartz wafer

Akihiro Takahashi, Takahito Ono, Yu Ching Lin, Masayoshi Esashi

ENG - Mechanical Systems Engineering

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we present the fabrication and the characterization of the cantilever-shaped quartz crystal resonator for high sensitive force sensing. Fabrication process employs low-temperature plasma-activated bonding of silicon to quartz wafer using N₂ plasma. Fabricated resonator have thickness of 2-20 Um, fundamental resonant frequency of thickness-shear mode of 76-720 MHz. The 20-μm-thick cantilever exhibits a high quality factor of 5700.

Original language	English
Title of host publication	2006 5th IEEE Conference on Sensors
Pages	1305-1308
Number of pages	4
DOIs	https://doi.org/10.1109/ICSENS.2007.355869
Publication status	Published - 2006
Event	2006 5th IEEE Conference on Sensors - Daegu, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	Proceedings of IEEE Sensors

Conference

Conference	2006 5th IEEE Conference on Sensors
Country/Territory	Korea, Republic of
City	Daegu
Period	06/10/22 → 06/10/25

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10.1109/ICSENS.2007.355869

Cite this

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title = "Fabrication of micromachined quartz-crystal resonators using surface activated bonding of silicon and quartz wafer",

abstract = "In this paper, we present the fabrication and the characterization of the cantilever-shaped quartz crystal resonator for high sensitive force sensing. Fabrication process employs low-temperature plasma-activated bonding of silicon to quartz wafer using N2 plasma. Fabricated resonator have thickness of 2-20 Um, fundamental resonant frequency of thickness-shear mode of 76-720 MHz. The 20-μm-thick cantilever exhibits a high quality factor of 5700.",

author = "Akihiro Takahashi and Takahito Ono and Lin, {Yu Ching} and Masayoshi Esashi",

year = "2006",

doi = "10.1109/ICSENS.2007.355869",

language = "English",

isbn = "1424403766",

series = "Proceedings of IEEE Sensors",

pages = "1305--1308",

booktitle = "2006 5th IEEE Conference on Sensors",

note = "2006 5th IEEE Conference on Sensors ; Conference date: 22-10-2006 Through 25-10-2006",

}

Takahashi, A, Ono, T, Lin, YC & Esashi, M 2006, Fabrication of micromachined quartz-crystal resonators using surface activated bonding of silicon and quartz wafer. in 2006 5th IEEE Conference on Sensors., 4178864, Proceedings of IEEE Sensors, pp. 1305-1308, 2006 5th IEEE Conference on Sensors, Daegu, Korea, Republic of, 06/10/22. https://doi.org/10.1109/ICSENS.2007.355869

Fabrication of micromachined quartz-crystal resonators using surface activated bonding of silicon and quartz wafer. / Takahashi, Akihiro; Ono, Takahito; Lin, Yu Ching et al.
2006 5th IEEE Conference on Sensors. 2006. p. 1305-1308 4178864 (Proceedings of IEEE Sensors).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication of micromachined quartz-crystal resonators using surface activated bonding of silicon and quartz wafer

AU - Takahashi, Akihiro

AU - Ono, Takahito

AU - Lin, Yu Ching

AU - Esashi, Masayoshi

PY - 2006

Y1 - 2006

N2 - In this paper, we present the fabrication and the characterization of the cantilever-shaped quartz crystal resonator for high sensitive force sensing. Fabrication process employs low-temperature plasma-activated bonding of silicon to quartz wafer using N2 plasma. Fabricated resonator have thickness of 2-20 Um, fundamental resonant frequency of thickness-shear mode of 76-720 MHz. The 20-μm-thick cantilever exhibits a high quality factor of 5700.

AB - In this paper, we present the fabrication and the characterization of the cantilever-shaped quartz crystal resonator for high sensitive force sensing. Fabrication process employs low-temperature plasma-activated bonding of silicon to quartz wafer using N2 plasma. Fabricated resonator have thickness of 2-20 Um, fundamental resonant frequency of thickness-shear mode of 76-720 MHz. The 20-μm-thick cantilever exhibits a high quality factor of 5700.

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DO - 10.1109/ICSENS.2007.355869

M3 - Conference contribution

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SN - 9781424403769

T3 - Proceedings of IEEE Sensors

SP - 1305

EP - 1308

BT - 2006 5th IEEE Conference on Sensors

T2 - 2006 5th IEEE Conference on Sensors

Y2 - 22 October 2006 through 25 October 2006

ER -

Fabrication of micromachined quartz-crystal resonators using surface activated bonding of silicon and quartz wafer

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