In this research, we propose a simple method to create nano-gaps with photolithography by a post-annealing process. The idea based on plastic deformation of strained Si springs by annealing is demonstrated. The resonator and the spring electrodes used to actuate and measure the resonant amplitude with a gap of a few microns were designed and fabricated. The force of water tension during evaporation was used to generate a strain in the springs. After drying, sticking effects were observed between the resonator and the electrodes with oxide layers. By post-annealing and removal of the oxide layers, the micro-gap was reduced to a nanometer gap by plastic deformation of highly doped Si.