TY - JOUR
T1 - Fabrication of nano-gap structures based on plastic deformation of strained Si springs by stiction effects
AU - Toda, Masaya
AU - Yokoyama, Atsushi
AU - Van Toan, Nguyen
AU - Inomata, Naoki
AU - Ono, Takahito
N1 - Funding Information:
Parts of this work were performed in the Micro/Nanomachining Research Education Center (MNC) and Micro System Integration Center (μSIC) of Tohoku University. This work was supported in part by Special Coordination Funds for Promoting Science and Technology, Formation of Innovation Center for Fusion of Advanced Technologies from the Japanese Ministry of Education, Culture, Sports, Science and Technology, and also supported in part by a Grant-in Aid for Scientific Research from Japan Society for the Promotion of Science.
Publisher Copyright:
© 2014, Springer-Verlag Berlin Heidelberg.
PY - 2014/3
Y1 - 2014/3
N2 - In this research, we propose a simple method to create nano-gaps with photolithography by a post-annealing process. The idea based on plastic deformation of strained Si springs by annealing is demonstrated. The resonator and the spring electrodes used to actuate and measure the resonant amplitude with a gap of a few microns were designed and fabricated. The force of water tension during evaporation was used to generate a strain in the springs. After drying, sticking effects were observed between the resonator and the electrodes with oxide layers. By post-annealing and removal of the oxide layers, the micro-gap was reduced to a nanometer gap by plastic deformation of highly doped Si.
AB - In this research, we propose a simple method to create nano-gaps with photolithography by a post-annealing process. The idea based on plastic deformation of strained Si springs by annealing is demonstrated. The resonator and the spring electrodes used to actuate and measure the resonant amplitude with a gap of a few microns were designed and fabricated. The force of water tension during evaporation was used to generate a strain in the springs. After drying, sticking effects were observed between the resonator and the electrodes with oxide layers. By post-annealing and removal of the oxide layers, the micro-gap was reduced to a nanometer gap by plastic deformation of highly doped Si.
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U2 - 10.1007/s00542-014-2182-z
DO - 10.1007/s00542-014-2182-z
M3 - Article
AN - SCOPUS:84922835826
SN - 0946-7076
VL - 21
SP - 649
EP - 654
JO - Microsystem Technologies
JF - Microsystem Technologies
IS - 3
ER -