TY - JOUR
T1 - Fabrication of nb-doped tio2 transparent conducting films by postdeposition annealing under nitrogen atmosphere
AU - Okazaki, Sohei
AU - Ohkubo, Junpei
AU - Nakao, Shoichiro
AU - Hirose, Yasushi
AU - Hitosugi, Taro
AU - Hasegawa, Tetsuya
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012/11
Y1 - 2012/11
N2 - Here, we report that highly conductive polycrystalline anatase Nb-doped TiO2 (TNO) thin films can be prepared via crystallization of amorphous precursors under N2 atmosphere. An optimized TNO film on a glass substrate exhibited a low resistivity of 8:4 104 cm and an absorbance of 6% at a wavelength of 460 nm. These transport and optical properties were comparable to those of TNO films fabricated by vacuum annealing. This demonstrates the potential of TNO as an electrode for GaN-based light-emitting diodes.
AB - Here, we report that highly conductive polycrystalline anatase Nb-doped TiO2 (TNO) thin films can be prepared via crystallization of amorphous precursors under N2 atmosphere. An optimized TNO film on a glass substrate exhibited a low resistivity of 8:4 104 cm and an absorbance of 6% at a wavelength of 460 nm. These transport and optical properties were comparable to those of TNO films fabricated by vacuum annealing. This demonstrates the potential of TNO as an electrode for GaN-based light-emitting diodes.
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U2 - 10.1143/JJAP.51.118003
DO - 10.1143/JJAP.51.118003
M3 - Article
AN - SCOPUS:84869133116
SN - 0021-4922
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 11
M1 - 118003
ER -