TY - GEN
T1 - Fabrication of p-i-n Si0.5Ge0.5 photodetctors on SiGe-on-Insulator Substrates
AU - Koh, S.
AU - Sawano, K.
AU - Shiraki, Y.
AU - Usami, N.
AU - Nakajima, K.
AU - Huang, X.
AU - Uda, S.
PY - 2004
Y1 - 2004
N2 - The fabrication and evaluation of a p-i-n Si0.5Ge0.5 photodetectors for 1.3 μm light detection on SiGe-on-insulator (SGOI) substrates with the Ge content of 0.5 was discussed. The photoresponsivity of the fabricated p-i-n diode was measured using monochromatic DC light with a fixed power and a computer interfaced digital multimeter. The responsivity has an oscillatory structure that is due to the multiple reflections at the interface between the buried oxide and SGOI layer. The dark current density of the p-i-n diodes at the voltage of -1 V was measured to be 0.04 mA/cm 2 which is one order lower than that of Ge p-i-n diode structures grown on SiGe graded buffer layers.
AB - The fabrication and evaluation of a p-i-n Si0.5Ge0.5 photodetectors for 1.3 μm light detection on SiGe-on-insulator (SGOI) substrates with the Ge content of 0.5 was discussed. The photoresponsivity of the fabricated p-i-n diode was measured using monochromatic DC light with a fixed power and a computer interfaced digital multimeter. The responsivity has an oscillatory structure that is due to the multiple reflections at the interface between the buried oxide and SGOI layer. The dark current density of the p-i-n diodes at the voltage of -1 V was measured to be 0.04 mA/cm 2 which is one order lower than that of Ge p-i-n diode structures grown on SiGe graded buffer layers.
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M3 - Conference contribution
AN - SCOPUS:18844451256
SN - 0780384741
T3 - 2004 1st IEEE International Conference on Group IV Photonics
SP - 61
EP - 63
BT - 2004 1st IEEE International Conference on Group IV Photonics
T2 - 2004 1st IEEE International Conference on Group IV Photonics
Y2 - 29 September 2004 through 1 October 2004
ER -