TY - JOUR
T1 - Fabrication of periodic nanohole multilayer structure on silicon surface toward photonic crystal
AU - Ohno, Y.
AU - Ozaki, N.
AU - Takeda, S.
N1 - Funding Information:
This work was partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Scientific Research (A) (2) No. 10305006, 1998-2000. We thank M.J. Caldas for her comments and discussions.
PY - 2001/12
Y1 - 2001/12
N2 - We have studied a porous structure on silicon surfaces that is introduced by electron irradiation. The structure consists of nanometer-sized holes arranged on silicon surfaces. Investigatinghe size and the distribution of surface nanoholes in a temperature range from about 4K to about 600K, we have estimated the porosity on a surface with nanoholes. We have fabricated a periodic dielectric multilayer structure on a silicon surface by introducing nanoholes periodically in one direction: alternating layers with different dielectric constants (the dielectric contrast of about 1.08), spaced by a distance of 100nm. We can form periodic dielectric layers at arbitrary locations on surfaces by scanning an electron beam, changing the periodicity and the dielectric constant by varying irradiation condition.
AB - We have studied a porous structure on silicon surfaces that is introduced by electron irradiation. The structure consists of nanometer-sized holes arranged on silicon surfaces. Investigatinghe size and the distribution of surface nanoholes in a temperature range from about 4K to about 600K, we have estimated the porosity on a surface with nanoholes. We have fabricated a periodic dielectric multilayer structure on a silicon surface by introducing nanoholes periodically in one direction: alternating layers with different dielectric constants (the dielectric contrast of about 1.08), spaced by a distance of 100nm. We can form periodic dielectric layers at arbitrary locations on surfaces by scanning an electron beam, changing the periodicity and the dielectric constant by varying irradiation condition.
KW - Photonic crystal
KW - Silicon
KW - Surface nanohole
KW - Transmission electron microscopy
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U2 - 10.1016/S0921-4526(01)00948-6
DO - 10.1016/S0921-4526(01)00948-6
M3 - Article
AN - SCOPUS:0035675682
SN - 0921-4526
VL - 308-310
SP - 1222
EP - 1225
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -