Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography

Hitoshi Nishino; Shinya Yoshida; Akira Kojima; Nokatsu Ikegami; Shuji Tanaka; Nobuyoshi Koshida; Masayoshi Esashi

doi:10.1002/ecj.11804

Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography

Hitoshi Nishino, Shinya Yoshida, Akira Kojima, Nokatsu Ikegami, Shuji Tanaka, Nobuyoshi Koshida, Masayoshi Esashi

ENG - Robotics

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Abstract

SUMMARY This paper reports on the development of a fundamental process for a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scale integrated circuit (LSI). The emitter array consists of 100 × 100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operating voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array with LSI and an extraction electrode plate was also developed based on Au-In and polymer bonding technologies.

Original language	English
Pages (from-to)	11-19
Number of pages	9
Journal	Electronics and Communications in Japan
Volume	99
Issue number	5
DOIs	https://doi.org/10.1002/ecj.11804
Publication status	Published - 2016 May 1

Keywords

massively parallel electron beam lithography
MEMS
nanocrystalline silicon
Pierce-type electron emitter

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10.1002/ecj.11804

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title = "Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography",

abstract = "SUMMARY This paper reports on the development of a fundamental process for a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scale integrated circuit (LSI). The emitter array consists of 100 × 100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operating voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array with LSI and an extraction electrode plate was also developed based on Au-In and polymer bonding technologies.",

keywords = "massively parallel electron beam lithography, MEMS, nanocrystalline silicon, Pierce-type electron emitter",

author = "Hitoshi Nishino and Shinya Yoshida and Akira Kojima and Nokatsu Ikegami and Shuji Tanaka and Nobuyoshi Koshida and Masayoshi Esashi",

note = "Publisher Copyright: {\textcopyright} 2016 Wiley Periodicals, Inc.",

year = "2016",

month = may,

day = "1",

doi = "10.1002/ecj.11804",

language = "English",

volume = "99",

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TY - JOUR

T1 - Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography

AU - Nishino, Hitoshi

AU - Yoshida, Shinya

AU - Kojima, Akira

AU - Ikegami, Nokatsu

AU - Tanaka, Shuji

AU - Koshida, Nobuyoshi

AU - Esashi, Masayoshi

PY - 2016/5/1

Y1 - 2016/5/1

N2 - SUMMARY This paper reports on the development of a fundamental process for a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scale integrated circuit (LSI). The emitter array consists of 100 × 100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operating voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array with LSI and an extraction electrode plate was also developed based on Au-In and polymer bonding technologies.

AB - SUMMARY This paper reports on the development of a fundamental process for a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scale integrated circuit (LSI). The emitter array consists of 100 × 100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operating voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array with LSI and an extraction electrode plate was also developed based on Au-In and polymer bonding technologies.

KW - massively parallel electron beam lithography

KW - MEMS

KW - nanocrystalline silicon

KW - Pierce-type electron emitter

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JO - Electronics and Communications in Japan

JF - Electronics and Communications in Japan

IS - 5

ER -

Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography

Abstract

Keywords

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