Fabrication of pseudocubic SrRuO3 (100) epitaxial thin films on Si by pulsed laser deposition

Takamitsu Higuchi, Yuxi Chen, Junichi Koike, Setsuya Iwashita, Masaya Ishida, Tatsuya Shimoda

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17 Citations (Scopus)


Pseudocubic SrRuO3 (100) epitaxial thin films were successfully fabricated on Si (100) with a SrO buffer layer of 6nm thickness by pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) revealed that the epitaxial growth of SrO occurred on naturally oxidized Si substrates, followed by the epitaxial growth of SrRuO3. X-ray diffraction (XRD) revealed high crystallinity with a full-width at half maximum (FWHM) of 1.9° in the SrRuO3 (200) rocking curve. XRD study of the in-plane orientation clarified a cube-on-cube epitaxy in which SrRuO3 <010> was rotated by 45° with respect to Si <010>. Deoxidization of SiO2 on Si by Sr is thought to play an important role in realizing the epitaxial growth of SrO.

Original languageEnglish
Pages (from-to)L481-L483
JournalJapanese Journal of Applied Physics
Issue number4
Publication statusPublished - 2002 Apr 15


  • Buffer layer
  • Cube-on-cube epitaxy
  • Pulsed laser deposition
  • Si
  • SrO
  • SrRuO
  • Thin film


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