TY - JOUR
T1 - Fabrication of Pt/Sr2(Ta1-x,Nbx) 2O7/IrO2/SiO2/Si device with large memory window and metal-ferroelectric-metal-insulator-Si field-effect transistor
AU - Takahashi, Ichirou
AU - Azumi, Keita
AU - Hirayama, Masaki
AU - Teramoto, Akinobu
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
PY - 2006/9/22
Y1 - 2006/9/22
N2 - Sr2(Ta1-x,Nbx)2O7 (STN, x = 0.3) is suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because it has a low dielectric constant and a high heat resistance. A new technology that enables the control of the orientation and properties (with a low dielectric constant and a large coercive field) of the STN film formed on an IrO2 film has been developed. We have successfully fabricated perovskite STN films with (110) and (172) orientations by controlling the crystal orientation of IrO2. An metal-ferroelectric-metal-insulator-Si (MFMIS) structure device with a large memory window of 2.5 V under 5 V writing operation has successfully been fabricated. Furthermore, the operation of the MFMIS FET, whose floating gate is IrO2 only, has been achieved for the first time.
AB - Sr2(Ta1-x,Nbx)2O7 (STN, x = 0.3) is suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because it has a low dielectric constant and a high heat resistance. A new technology that enables the control of the orientation and properties (with a low dielectric constant and a large coercive field) of the STN film formed on an IrO2 film has been developed. We have successfully fabricated perovskite STN films with (110) and (172) orientations by controlling the crystal orientation of IrO2. An metal-ferroelectric-metal-insulator-Si (MFMIS) structure device with a large memory window of 2.5 V under 5 V writing operation has successfully been fabricated. Furthermore, the operation of the MFMIS FET, whose floating gate is IrO2 only, has been achieved for the first time.
KW - Controlling crystal orientation of ferroelectric
KW - Large memory window
KW - MFMIS-FET with IrO floating gate
KW - Sr(Ta,Nb)O (STN)
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U2 - 10.1143/JJAP.45.7336
DO - 10.1143/JJAP.45.7336
M3 - Article
AN - SCOPUS:33749012520
SN - 0021-4922
VL - 45
SP - 7336
EP - 7340
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 9 B
ER -