Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties

Syunji Nakata, Syoji Yamada, Yoshiro Hirayama, Tadashi Saku, Yoshiji Horikoshi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Quantum wire structures are defined on a modulation-doped AlGaAs/GaAs wafer grown by MBE using highly resistive regions formed by focused-Ga-ion-beam scanning and subsequent annealing. These fabricated wires show positive magnetoconductance and universal conductance fluctuations at low temperature. A Schottky electrode is placed on these wires and magnetoresistance characteristics are measured by changing the gate voltage at a fixed temperature. Ballistic electron transport is confirmed for a short wire, 0.6 µm in length, whereas universal conductance fluctuations are observed for a long wire, 2.4 µm in length, and the relationship between the phase coherent length and the conductance is obtained as Lin∝G0.7from the gate voltage dependence on fluctuation amplitude.

Original languageEnglish
Pages (from-to)48-52
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number1 R
Publication statusPublished - 1990 Jan


  • Annealing
  • Electron-electron scattering
  • Focused ion beam
  • Quantized conductance
  • Quantumwire
  • Universal conductance fluctuations


Dive into the research topics of 'Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties'. Together they form a unique fingerprint.

Cite this