Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties

Syunji Nakata; Syoji Yamada; Yoshiro Hirayama; Tadashi Saku; Yoshiji Horikoshi

doi:10.1143/JJAP.29.48

Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties

Syunji Nakata, Syoji Yamada, Yoshiro Hirayama, Tadashi Saku, Yoshiji Horikoshi

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Quantum wire structures are defined on a modulation-doped AlGaAs/GaAs wafer grown by MBE using highly resistive regions formed by focused-Ga-ion-beam scanning and subsequent annealing. These fabricated wires show positive magnetoconductance and universal conductance fluctuations at low temperature. A Schottky electrode is placed on these wires and magnetoresistance characteristics are measured by changing the gate voltage at a fixed temperature. Ballistic electron transport is confirmed for a short wire, 0.6 µm in length, whereas universal conductance fluctuations are observed for a long wire, 2.4 µm in length, and the relationship between the phase coherent length and the conductance is obtained as L_in∝G^0.7from the gate voltage dependence on fluctuation amplitude.

Original language	English
Pages (from-to)	48-52
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	29
Issue number	1 R
DOIs	https://doi.org/10.1143/JJAP.29.48
Publication status	Published - 1990 Jan

Keywords

Annealing
Electron-electron scattering
Focused ion beam
Quantized conductance
Quantumwire
Universal conductance fluctuations

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10.1143/JJAP.29.48

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title = "Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties",

abstract = "Quantum wire structures are defined on a modulation-doped AlGaAs/GaAs wafer grown by MBE using highly resistive regions formed by focused-Ga-ion-beam scanning and subsequent annealing. These fabricated wires show positive magnetoconductance and universal conductance fluctuations at low temperature. A Schottky electrode is placed on these wires and magnetoresistance characteristics are measured by changing the gate voltage at a fixed temperature. Ballistic electron transport is confirmed for a short wire, 0.6 µm in length, whereas universal conductance fluctuations are observed for a long wire, 2.4 µm in length, and the relationship between the phase coherent length and the conductance is obtained as Lin∝G0.7from the gate voltage dependence on fluctuation amplitude.",

keywords = "Annealing, Electron-electron scattering, Focused ion beam, Quantized conductance, Quantumwire, Universal conductance fluctuations",

author = "Syunji Nakata and Syoji Yamada and Yoshiro Hirayama and Tadashi Saku and Yoshiji Horikoshi",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties

AU - Nakata, Syunji

AU - Yamada, Syoji

AU - Hirayama, Yoshiro

AU - Saku, Tadashi

AU - Horikoshi, Yoshiji

PY - 1990/1

Y1 - 1990/1

N2 - Quantum wire structures are defined on a modulation-doped AlGaAs/GaAs wafer grown by MBE using highly resistive regions formed by focused-Ga-ion-beam scanning and subsequent annealing. These fabricated wires show positive magnetoconductance and universal conductance fluctuations at low temperature. A Schottky electrode is placed on these wires and magnetoresistance characteristics are measured by changing the gate voltage at a fixed temperature. Ballistic electron transport is confirmed for a short wire, 0.6 µm in length, whereas universal conductance fluctuations are observed for a long wire, 2.4 µm in length, and the relationship between the phase coherent length and the conductance is obtained as Lin∝G0.7from the gate voltage dependence on fluctuation amplitude.

AB - Quantum wire structures are defined on a modulation-doped AlGaAs/GaAs wafer grown by MBE using highly resistive regions formed by focused-Ga-ion-beam scanning and subsequent annealing. These fabricated wires show positive magnetoconductance and universal conductance fluctuations at low temperature. A Schottky electrode is placed on these wires and magnetoresistance characteristics are measured by changing the gate voltage at a fixed temperature. Ballistic electron transport is confirmed for a short wire, 0.6 µm in length, whereas universal conductance fluctuations are observed for a long wire, 2.4 µm in length, and the relationship between the phase coherent length and the conductance is obtained as Lin∝G0.7from the gate voltage dependence on fluctuation amplitude.

KW - Annealing

KW - Electron-electron scattering

KW - Focused ion beam

KW - Quantized conductance

KW - Quantumwire

KW - Universal conductance fluctuations

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1 R

ER -

Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties

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Keywords

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