Fabrication of self-supported Si nano-structure with STM

Hitoshi Hamanaka, Takahito Ono, Masayoshi Esashi

Research output: Contribution to conferencePaperpeer-review


A self-supported Si nano-structure was fabricated on a Si diaphragm using STM induced anodization and anisotropic Si etching. The width and the thickness of the nano-structure were both approximately 200 nm. For the fabrication of the nano-structure, a very thin double-layered diaphragm which consist of a top Si layer (160 nm) and buried-SiO2 layer (100) was employed. This diaphragm was prepared by etching a SIMOX wafer in TMAH solution from the back side. The top Si layer was protected from the etchant with the buried-SiO2, and used for Si nano-structure. Oxide line pattern was delineated by STM induced anodization of a hydrogen-terminated Si surface. This top Si-layer having anodized-pattern was selectively etched in a hydrazine solution. Anodized oxide patterns act as masks to form Si nano-structures during the etching process. The buried-SiO2 layer was then etched out to release the nano-structure. A supercritical drying method was used for drying the nano-structure after etching the buried-SiO2 layer in buffered HF. The widths of the anodized-oxide were observed to be approximately 30 nm by a TEM investigation. Since the Si (100) layer is wet etched anisotropicaly, the width of the structure was enlarged approximately 200 nm.

Original languageEnglish
Number of pages6
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1997 10th Annual International Workshop on Micro Electro Mechanical Systems, MEMS - Nagoya, Jpn
Duration: 1997 Jan 261997 Jan 30


OtherProceedings of the 1997 10th Annual International Workshop on Micro Electro Mechanical Systems, MEMS
CityNagoya, Jpn

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Mechanical Engineering


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