TY - JOUR
T1 - Fabrication of visible-light-transparent solar cells using p-type nio films by low oxygen fraction reactive rf sputtering deposition
AU - Warasawa, Moe
AU - Watanabe, Yousuke
AU - Ishida, Jun
AU - Murata, Yoshitsuna
AU - Chichibu, Shigefusa F.
AU - Sugiyama, Mutsumi
PY - 2013/2
Y1 - 2013/2
N2 - Visible-light-transparent p-type NiO films were deposited by reactive RF sputtering under unintentional heating. An optical transmittance of >80% was obtained in the wavelength range of 500-800nm when the films were deposited under a very low O2 fraction in the gas phase O2/(Ar + O) = 0.5%. This result may reflect a decrease in the concentration of Ni vacancies due to the increase in their formation energy under oxygen-poor deposition conditions. Heterostructure pn junctions consisting of p-type NiO and n-type ZnO layers were also deposited. We eventually observed a slight but noticeable photovoltaic effect.
AB - Visible-light-transparent p-type NiO films were deposited by reactive RF sputtering under unintentional heating. An optical transmittance of >80% was obtained in the wavelength range of 500-800nm when the films were deposited under a very low O2 fraction in the gas phase O2/(Ar + O) = 0.5%. This result may reflect a decrease in the concentration of Ni vacancies due to the increase in their formation energy under oxygen-poor deposition conditions. Heterostructure pn junctions consisting of p-type NiO and n-type ZnO layers were also deposited. We eventually observed a slight but noticeable photovoltaic effect.
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U2 - 10.7567/JJAP.52.021102
DO - 10.7567/JJAP.52.021102
M3 - Article
AN - SCOPUS:84874150621
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 2
M1 - 021102
ER -
