Fabry-Pérot interference in a triple-gated quantum point contact

S. Maeda; S. Miyamoto; M. H. Fauzi; K. Nagase; K. Sato; Y. Hirayama

doi:10.1063/1.4964404

Fabry-Pérot interference in a triple-gated quantum point contact

S. Maeda, S. Miyamoto, M. H. Fauzi, K. Nagase, K. Sato, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We demonstrated that a triple-gated GaAs quantum point contact, which has an additional surface gate between a pair of split gates to strengthen the lateral confinement, produces the well-defined quantized conductance and Fabry-Pérot-type (FP-type) oscillations on it even using a relatively low mobility wafer. A one-dimensional phenomenological model potential was developed to explain the oscillatory behavior. By combining the model calculations and dc bias spectroscopy, we obtained a detailed information about the energy scales of the oscillatory structures. The relationships between the FP-type oscillations and the anomaly below the first plateau will be addressed.

Original language	English
Article number	143509
Journal	Applied Physics Letters
Volume	109
Issue number	14
DOIs	https://doi.org/10.1063/1.4964404
Publication status	Published - 2016 Oct 3

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10.1063/1.4964404

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title = "Fabry-P{\'e}rot interference in a triple-gated quantum point contact",

abstract = "We demonstrated that a triple-gated GaAs quantum point contact, which has an additional surface gate between a pair of split gates to strengthen the lateral confinement, produces the well-defined quantized conductance and Fabry-P{\'e}rot-type (FP-type) oscillations on it even using a relatively low mobility wafer. A one-dimensional phenomenological model potential was developed to explain the oscillatory behavior. By combining the model calculations and dc bias spectroscopy, we obtained a detailed information about the energy scales of the oscillatory structures. The relationships between the FP-type oscillations and the anomaly below the first plateau will be addressed.",

author = "S. Maeda and S. Miyamoto and Fauzi, {M. H.} and K. Nagase and K. Sato and Y. Hirayama",

note = "Funding Information: We greatly appreciate the support from ERATO Nuclear Spin Electronics Project, JST. S.M., M.H.F. and Y.H. acknowledge the support from Interdepartmental Doctoral Degree Program for Multi-dimensional Material Science Leaders at Tohoku University. K.N. and Y.H. acknowledge the support from Graduate Program in Spintronics, Tohoku University. Y.H. acknowledges the financial support from KAKENHI Grant Nos. 26287059 and 15H05867. Publisher Copyright: {\textcopyright} 2016 Author(s).",

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AU - Maeda, S.

AU - Miyamoto, S.

AU - Fauzi, M. H.

AU - Nagase, K.

AU - Sato, K.

AU - Hirayama, Y.

N1 - Funding Information: We greatly appreciate the support from ERATO Nuclear Spin Electronics Project, JST. S.M., M.H.F. and Y.H. acknowledge the support from Interdepartmental Doctoral Degree Program for Multi-dimensional Material Science Leaders at Tohoku University. K.N. and Y.H. acknowledge the support from Graduate Program in Spintronics, Tohoku University. Y.H. acknowledges the financial support from KAKENHI Grant Nos. 26287059 and 15H05867. Publisher Copyright: © 2016 Author(s).

PY - 2016/10/3

Y1 - 2016/10/3

N2 - We demonstrated that a triple-gated GaAs quantum point contact, which has an additional surface gate between a pair of split gates to strengthen the lateral confinement, produces the well-defined quantized conductance and Fabry-Pérot-type (FP-type) oscillations on it even using a relatively low mobility wafer. A one-dimensional phenomenological model potential was developed to explain the oscillatory behavior. By combining the model calculations and dc bias spectroscopy, we obtained a detailed information about the energy scales of the oscillatory structures. The relationships between the FP-type oscillations and the anomaly below the first plateau will be addressed.

AB - We demonstrated that a triple-gated GaAs quantum point contact, which has an additional surface gate between a pair of split gates to strengthen the lateral confinement, produces the well-defined quantized conductance and Fabry-Pérot-type (FP-type) oscillations on it even using a relatively low mobility wafer. A one-dimensional phenomenological model potential was developed to explain the oscillatory behavior. By combining the model calculations and dc bias spectroscopy, we obtained a detailed information about the energy scales of the oscillatory structures. The relationships between the FP-type oscillations and the anomaly below the first plateau will be addressed.

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Fabry-Pérot interference in a triple-gated quantum point contact

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