Facile and Reversible Carrier-Type Manipulation of Layered MoTe2Toward Long-Term Stable Electronics

Mengjiao Li, Che Yi Lin, Yuan Ming Chang, Shih Hsien Yang, Mu Pai Lee, Ciao Fen Chen, Ko Chun Lee, Feng Shou Yang, Yi Chou, Yi Chun Lin, Keiji Ueno, Yumeng Shi, Yi Chia Chou, Kazuhito Tsukagoshi, Yen Fu Lin

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type manipulation in field-effect transistors (FETs) containing α-phase molybdenum ditelluride (MoTe2) by a rapid thermal annealing (RTA) process in dry air for hole-dominated and electron-beam (EB) treatment for electron-dominated FETs. EB treatment induced a distinct shift of the transfer curve by around 135 V compared with that of the FET-processed RTA treatment, indicating that the carrier density of the EB-treated FET was enhanced by about 1 order of magnitude. X-ray photoelectron spectroscopy analysis revealed that the atomic ratio of Te decreased from 66.4 to 60.8% in the MoTe2 channel after EB treatment. The Fermi level is pinned near the new energy level resulting from the Te vacancies produced by the EB process, leading to the electron-dominant effect of the MoTe2 FET. The electron-dominated MoTe2 FET showed excellent stability for more than 700 days. Thus, we not only realized the reversible modulation of carrier-type in layered MoTe2 FETs but also demonstrated MoTe2 channels with desirable performance, including long-term stability.

Original languageEnglish
Pages (from-to)42918-42924
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number38
Publication statusPublished - 2020 Sept 23
Externally publishedYes


  • carrier-type manipulation
  • electron-beam treatment
  • logic-circuit applications
  • telluride vacancy
  • α-MoTe

ASJC Scopus subject areas

  • Materials Science(all)


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