Facile and Reversible Carrier-Type Manipulation of Layered MoTe2Toward Long-Term Stable Electronics

Mengjiao Li; Che Yi Lin; Yuan Ming Chang; Shih Hsien Yang; Mu Pai Lee; Ciao Fen Chen; Ko Chun Lee; Feng Shou Yang; Yi Chou; Yi Chun Lin; Keiji Ueno; Yumeng Shi; Yi Chia Chou; Kazuhito Tsukagoshi; Yen Fu Lin

doi:10.1021/acsami.0c09922

Facile and Reversible Carrier-Type Manipulation of Layered MoTe₂Toward Long-Term Stable Electronics

Mengjiao Li, Che Yi Lin, Yuan Ming Chang, Shih Hsien Yang, Mu Pai Lee, Ciao Fen Chen, Ko Chun Lee, Feng Shou Yang, Yi Chou, Yi Chun Lin, Keiji Ueno, Yumeng Shi, Yi Chia Chou, Kazuhito Tsukagoshi, Yen Fu Lin

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type manipulation in field-effect transistors (FETs) containing α-phase molybdenum ditelluride (MoTe2) by a rapid thermal annealing (RTA) process in dry air for hole-dominated and electron-beam (EB) treatment for electron-dominated FETs. EB treatment induced a distinct shift of the transfer curve by around 135 V compared with that of the FET-processed RTA treatment, indicating that the carrier density of the EB-treated FET was enhanced by about 1 order of magnitude. X-ray photoelectron spectroscopy analysis revealed that the atomic ratio of Te decreased from 66.4 to 60.8% in the MoTe2 channel after EB treatment. The Fermi level is pinned near the new energy level resulting from the Te vacancies produced by the EB process, leading to the electron-dominant effect of the MoTe2 FET. The electron-dominated MoTe2 FET showed excellent stability for more than 700 days. Thus, we not only realized the reversible modulation of carrier-type in layered MoTe2 FETs but also demonstrated MoTe2 channels with desirable performance, including long-term stability.

Original language	English
Pages (from-to)	42918-42924
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	12
Issue number	38
DOIs	https://doi.org/10.1021/acsami.0c09922
Publication status	Published - 2020 Sept 23
Externally published	Yes

Keywords

carrier-type manipulation
electron-beam treatment
logic-circuit applications
telluride vacancy
α-MoTe

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1021/acsami.0c09922

Cite this

Li, M., Lin, C. Y., Chang, Y. M., Yang, S. H., Lee, M. P., Chen, C. F., Lee, K. C., Yang, F. S., Chou, Y., Lin, Y. C., Ueno, K., Shi, Y., Chou, Y. C., Tsukagoshi, K., & Lin, Y. F. (2020). Facile and Reversible Carrier-Type Manipulation of Layered MoTe₂Toward Long-Term Stable Electronics. ACS Applied Materials and Interfaces, 12(38), 42918-42924. https://doi.org/10.1021/acsami.0c09922

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title = "Facile and Reversible Carrier-Type Manipulation of Layered MoTe2Toward Long-Term Stable Electronics",

abstract = "Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type manipulation in field-effect transistors (FETs) containing α-phase molybdenum ditelluride (MoTe2) by a rapid thermal annealing (RTA) process in dry air for hole-dominated and electron-beam (EB) treatment for electron-dominated FETs. EB treatment induced a distinct shift of the transfer curve by around 135 V compared with that of the FET-processed RTA treatment, indicating that the carrier density of the EB-treated FET was enhanced by about 1 order of magnitude. X-ray photoelectron spectroscopy analysis revealed that the atomic ratio of Te decreased from 66.4 to 60.8% in the MoTe2 channel after EB treatment. The Fermi level is pinned near the new energy level resulting from the Te vacancies produced by the EB process, leading to the electron-dominant effect of the MoTe2 FET. The electron-dominated MoTe2 FET showed excellent stability for more than 700 days. Thus, we not only realized the reversible modulation of carrier-type in layered MoTe2 FETs but also demonstrated MoTe2 channels with desirable performance, including long-term stability. ",

keywords = "carrier-type manipulation, electron-beam treatment, logic-circuit applications, telluride vacancy, α-MoTe",

author = "Mengjiao Li and Lin, {Che Yi} and Chang, {Yuan Ming} and Yang, {Shih Hsien} and Lee, {Mu Pai} and Chen, {Ciao Fen} and Lee, {Ko Chun} and Yang, {Feng Shou} and Yi Chou and Lin, {Yi Chun} and Keiji Ueno and Yumeng Shi and Chou, {Yi Chia} and Kazuhito Tsukagoshi and Lin, {Yen Fu}",

note = "Funding Information: This work was supported by the Taiwan Ministry of Science and Technology (Grant Nos. MOST 107-2811-M-005-510 and MOST 109-2636-M-009-002) and the core facility support in NCTU from MOST. Publisher Copyright: Copyright {\textcopyright} 2020 American Chemical Society.",

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doi = "10.1021/acsami.0c09922",

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T1 - Facile and Reversible Carrier-Type Manipulation of Layered MoTe2Toward Long-Term Stable Electronics

AU - Li, Mengjiao

AU - Lin, Che Yi

AU - Chang, Yuan Ming

AU - Yang, Shih Hsien

AU - Lee, Mu Pai

AU - Chen, Ciao Fen

AU - Lee, Ko Chun

AU - Yang, Feng Shou

AU - Chou, Yi

AU - Lin, Yi Chun

AU - Ueno, Keiji

AU - Shi, Yumeng

AU - Chou, Yi Chia

AU - Tsukagoshi, Kazuhito

AU - Lin, Yen Fu

N1 - Funding Information: This work was supported by the Taiwan Ministry of Science and Technology (Grant Nos. MOST 107-2811-M-005-510 and MOST 109-2636-M-009-002) and the core facility support in NCTU from MOST. Publisher Copyright: Copyright © 2020 American Chemical Society.

PY - 2020/9/23

Y1 - 2020/9/23

N2 - Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type manipulation in field-effect transistors (FETs) containing α-phase molybdenum ditelluride (MoTe2) by a rapid thermal annealing (RTA) process in dry air for hole-dominated and electron-beam (EB) treatment for electron-dominated FETs. EB treatment induced a distinct shift of the transfer curve by around 135 V compared with that of the FET-processed RTA treatment, indicating that the carrier density of the EB-treated FET was enhanced by about 1 order of magnitude. X-ray photoelectron spectroscopy analysis revealed that the atomic ratio of Te decreased from 66.4 to 60.8% in the MoTe2 channel after EB treatment. The Fermi level is pinned near the new energy level resulting from the Te vacancies produced by the EB process, leading to the electron-dominant effect of the MoTe2 FET. The electron-dominated MoTe2 FET showed excellent stability for more than 700 days. Thus, we not only realized the reversible modulation of carrier-type in layered MoTe2 FETs but also demonstrated MoTe2 channels with desirable performance, including long-term stability.

AB - Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type manipulation in field-effect transistors (FETs) containing α-phase molybdenum ditelluride (MoTe2) by a rapid thermal annealing (RTA) process in dry air for hole-dominated and electron-beam (EB) treatment for electron-dominated FETs. EB treatment induced a distinct shift of the transfer curve by around 135 V compared with that of the FET-processed RTA treatment, indicating that the carrier density of the EB-treated FET was enhanced by about 1 order of magnitude. X-ray photoelectron spectroscopy analysis revealed that the atomic ratio of Te decreased from 66.4 to 60.8% in the MoTe2 channel after EB treatment. The Fermi level is pinned near the new energy level resulting from the Te vacancies produced by the EB process, leading to the electron-dominant effect of the MoTe2 FET. The electron-dominated MoTe2 FET showed excellent stability for more than 700 days. Thus, we not only realized the reversible modulation of carrier-type in layered MoTe2 FETs but also demonstrated MoTe2 channels with desirable performance, including long-term stability.

KW - carrier-type manipulation

KW - electron-beam treatment

KW - logic-circuit applications

KW - telluride vacancy

KW - α-MoTe

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