@inproceedings{ac281288f4d64db89a3a505ade5ca0e4,
title = "Failure analysis of a SiC MOS capacitor with a poly-Si gate electrode",
abstract = "The failure mechanism of a SiC metal-oxide-semiconductor capacitor with a poly-Si gate electrode was investigated by time-dependent dielectric breakdown testing under a 200-nA constant current stress. The capacitor exhibited both hard and soft breakdowns. After dielectric breakdown in both cases, adjacent concaves were observed on the capacitor with a field-emission scanning electron microscope. Additional optical beam-induced resistance changes and photo-emission analysis of a capacitor after hard-breakdown located a failure point on the periphery of a group of adjacent concaves. Cross-sectional scanning transmission electron microscope observation revealed that a narrow, vertical defect had formed at this point on the SiC substrate.",
keywords = "MOS, Photo-emission, Poly-Si, Silicon carbide, TDDB",
author = "Soshi Sato and Kikuo Yamabe and Tetsuo Endoh and Masaaki Niwa",
note = "Funding Information: This work was supported by JSPS KAKENHI Grant Number 25289082 and 26870043, and was performed at the Center for Innovative Integrated Electronic Systems, Tohoku University. The authors thank S. Suzuki and K. Koshikawa at Hamamatsu Photonics K.K. for the emission microscope analysis and fruitful discussions. Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.485",
language = "English",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "485--488",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and {La Via}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
}