TY - JOUR
T1 - Far-infrared absorption by oxygen in silicon
AU - Yamada-Kaneta, Hiroshi
AU - Ogawa, Tsutomu
AU - Muraishi, Shuichi
AU - Kaneta, Chioko
AU - Wada, Kunihiko
PY - 1988
Y1 - 1988
N2 - Far-infrared absorption measurements in the 14-50 cm- 1 range have been performed for oxygen containing silicon crystals in a temperature range of 4.2-35 K. In addition to the previously reported absorption peaks at 29.3, 37.8, 43.3, and 49.0 cm-1 [D. R. Bosomworth, W. Hayes, A. R. L. Spray, and G. D. Watkins, Proc. R. Soc. London A 317, 133 (1970)], a fine structure with peaks at 25.3, 28.3, 30.2, and 33.3 cm-1 has been found, which is considered to be a sideband caused by a coupling between the off-center excitation of the interstitial oxygen and other anharmonic localized excitation of an energy of about 1 cm -1 hc.
AB - Far-infrared absorption measurements in the 14-50 cm- 1 range have been performed for oxygen containing silicon crystals in a temperature range of 4.2-35 K. In addition to the previously reported absorption peaks at 29.3, 37.8, 43.3, and 49.0 cm-1 [D. R. Bosomworth, W. Hayes, A. R. L. Spray, and G. D. Watkins, Proc. R. Soc. London A 317, 133 (1970)], a fine structure with peaks at 25.3, 28.3, 30.2, and 33.3 cm-1 has been found, which is considered to be a sideband caused by a coupling between the off-center excitation of the interstitial oxygen and other anharmonic localized excitation of an energy of about 1 cm -1 hc.
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U2 - 10.1063/1.100240
DO - 10.1063/1.100240
M3 - Article
AN - SCOPUS:36549093361
SN - 0003-6951
VL - 53
SP - 2391
EP - 2393
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 24
ER -